MMRF1013HR5

Overview

The MMRF1013HR5 is a lateral N-channel broadband RF power MOSFET manufactured by NXP Semiconductors. It operates within the 2700-2900 MHz frequency range and delivers 320 W of output power at a 30 V supply voltage. The device utilizes silicon technology and is housed in a reel or cut tape package. This component is classified as an RF MOSFET transistor designed for high-power radio frequency applications.

Feature Summary

• Lateral N-channel broadband RF power MOSFET construction
• Designed for operation in the 2700-2900 MHz frequency band
• Capable of delivering 320 W output power at 30 V

Applications

• Broadband RF power amplification
• Industrial, Scientific, and Medical (ISM) equipment
• Radio frequency signal generation systems

Procurement Notes

Verify current availability status as the product lifecycle is listed as discontinued. Confirm RoHS compliance details through official documentation before integration. Ensure handling procedures align with ESD protection requirements for sensitive semiconductor components during storage and assembly processes.

Selection Notes

Select this component for applications requiring high power output in the 2.7 to 2.9 GHz range. Consider the 30 V operating voltage and silicon-based lateral structure when designing bias networks. Evaluate thermal management needs due to the high power dissipation characteristics inherent to 320 W RF power transistors.

Part Context

This part belongs to the MMRF series of RF power MOSFETs from NXP Semiconductors. These devices are engineered for robust performance in demanding radio frequency environments. The HR5 suffix typically denotes specific packaging configurations such as reel or cut tape formats for automated assembly.

Replacement Considerations

As the product lifecycle is discontinued, verify if alternative parts from the same family or newer generations are available. Consult official substitution guides to ensure electrical compatibility and pinout alignment for existing designs.