MMRF1013HSR5

Overview

The MMRF1013HSR5 is a lateral N-channel broadband RF power MOSFET manufactured by NXP Semiconductors. It operates within the 2700-2900 MHz frequency range and delivers 320 W of output power at a 30 V supply voltage. The device utilizes silicon technology and is housed in an NI-1230S-4 package, available in reel or cut tape formats.

Feature Summary

• Lateral N-channel LDMOS construction for high linearity
• Broadband operation across UHF/L-band frequencies
• High power density design for compact form factors

Applications

• Base station transmitter modules
• Broadband RF power amplification
• Military communication systems

Procurement Notes

Verify component authenticity through authorized channels due to discontinued status. Confirm package integrity and RoHS compliance against original datasheet specifications. Ensure handling procedures match ESD sensitivity requirements for sensitive semiconductor devices during installation.

Selection Notes

Select this component for applications requiring high power output in the 2.7 to 2.9 GHz band. Evaluate thermal management capabilities given the 320 W power dissipation. Compare gain and efficiency metrics against alternative devices if specific bandwidth or voltage constraints differ from standard 30 V operations.

Part Context

This part belongs to the MMRF1013 series of RF power transistors. It shares the NI-1230S-4 package with other high-power variants like the MMRF1312H. The series targets demanding RF infrastructure applications requiring robust performance in wideband scenarios.

Replacement Considerations

Public confirmed substitute part numbers are not available in verified documentation.