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The MMRF1020-04NR3 is a symmetrical Doherty RF power LDMOS transistor designed for cellular base station applications. It operates within the 720 to 960 MHz frequency range and supports wideband power amplifier applications from 600 to 1000 MHz. The device delivers an average output power of 100 W at 48 Vdc, with saturated power levels reaching up to 500 W. Key electrical characteristics include a typical power gain of 19.5 dB and a drain efficiency of 48.5% under single-carrier W-CDMA conditions.
Verify the specific ordering suffix against official documentation to confirm packaging details. The R3 suffix indicates tape and reel packaging containing 250 units on a 32 mm tape width. Confirm RoHS compliance status and ensure compatibility with the intended thermal management solution before procurement.
Select this component for high-efficiency Doherty amplifier designs operating between 720 and 960 MHz. Ensure the design accommodates the required 48 Vdc supply and manages thermal resistance effectively. Verify that the application requires internal input matching and supports the specified quiescent current parameters for optimal performance.
This NXP USA Inc. part belongs to the RF Power LDMOS Transistor family. It utilizes N-Channel Enhancement-Mode Lateral MOSFET technology. The device is housed in an OM-780-4L plastic package with an exposed backside source terminal for thermal dissipation.
Consult official manufacturer documentation for verified substitute part numbers. No direct public substitutes are confirmed in the provided datasheet.
The maximum Drain-Source Voltage (VDSS) rating is +105 Vdc.
Yes, the part is internally input matched for ease of use.
The Operating Junction Temperature Range is -40 to +225 °C.