MMRF1022HSR5

Overview

The MMRF1022HSR5 is an asymmetrical Doherty RF power LDMOS transistor manufactured by NXP Semiconductors. It operates within the frequency range of 2110-2170 MHz, delivering 63 W average output power at a test voltage of 28 V. The device features a dual configuration with a gain of 16.2 dB and utilizes the NI-1230-4LS2L package. Designed for high instantaneous signal bandwidth capabilities, it supports applications requiring robust RF performance in cellular infrastructure.

Feature Summary

• Asymmetrical Doherty architecture optimized for wideband signal processing
• High efficiency LDMOS technology for RF power amplification
• Dual configuration design supporting complex modulation schemes

Applications

• Cellular base station power amplifiers
• Broadband wireless communication systems
• Instantaneous signal bandwidth applications

Procurement Notes

Verify component authenticity through authorized channels as this part may be obsolete or discontinued. Confirm RoHS3 compliance status and check for moisture sensitivity level requirements before integration. Ensure supply chain documentation matches the specific NI-1230-4LS2L package variant to avoid compatibility issues during assembly.

Selection Notes

Select this component for designs requiring 63 W output in the 2.1 GHz band with Doherty topology benefits. Consider the dual configuration and 16.2 dB gain when designing matching networks. Evaluate thermal management needs for the NI-1230-4LS2L package in high-power continuous operation scenarios.

Part Context

This LDMOS transistor belongs to NXP's RF power MOSFET family, specifically engineered for base station applications. It complements other MMRF series devices offering varying power levels and frequency ranges for scalable infrastructure solutions.

Replacement Considerations

Check for direct substitutes like MMRF1022HS or updated variants from NXP. Verify pinout and thermal pad compatibility with existing PCB layouts before substitution.