MMRF1304LR5

MMRF1304LR5

  • Description:RF MOSFET LDMOS 50V NI360
  • Series:-

SKU:60b42af5a0d9 Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 50V NI360
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:512MHz
  • Gain:25.9dB
  • Voltage - Test:50 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:10 mA
  • Power - Output:25W
  • Voltage - Rated:133 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:NI-360
  • Supplier Device Package:NI-360
  • Configuration:-

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MMRF1304LR5

Overview

The MMRF1304LR5 is a wideband RF power LDMOS transistor manufactured by NXP Semiconductors. It operates within a frequency range of 1.8 to 2000 MHz and delivers an output power of 25 W at a supply voltage of 50 V. The device is designed for both narrowband and broadband continuous wave (CW) or pulse applications. It utilizes advanced LDMOS technology to ensure high linearity and gain stability across its operating band, making it suitable for demanding radio frequency environments.

Feature Summary

  • Wideband operation covering 1.8 to 2000 MHz
  • High linearity and gain stability using LDMOS technology
  • Suitable for narrowband and broadband CW or pulse applications

Applications

  • Broadband RF power amplification
  • Narrowband CW signal generation
  • Pulse application power driving

Procurement Notes

Verify the specific datasheet version and chemical content information published by NXP Semiconductors prior to procurement. Ensure that the component meets all relevant environmental compliance standards, such as RoHS and REACH regulations, as documented in the official product portfolio disclosures. Confirm package integrity and authenticity through authorized distribution channels to guarantee performance reliability in final assembly.

Selection Notes

Select the MMRF1304LR5 when a wideband solution spanning 1.8 to 2000 MHz is required with 25 W output capability at 50 V bias. Consider this LDMOS transistor for designs prioritizing linearity and stable gain over broad frequency ranges. Evaluate thermal management requirements based on the NI-360 package specifications and ensure the application supports either continuous wave or pulsed operation modes compatible with the device's rated parameters.

Part Context

This component belongs to NXP's MMRF series of wideband RF power LDMOS transistors. These devices are engineered for robust performance in communication systems requiring reliable power amplification across multiple frequency bands. The MMRF1304LR5 specifically addresses needs for versatile RF front-end modules where wideband coverage and consistent electrical characteristics are critical for system integrity and signal fidelity.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation. Verify compatibility with existing circuit designs if considering alternative components from other manufacturers or different series within the same family.

MMRF1304LR5MMRF1304LR5

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