MMRF1306HSR5

Overview

The MMRF1306HSR5 is an RF MOSFET transistor manufactured by NXP Semiconductors. It utilizes Silicon technology and operates within the 10-500 MHz frequency range. The device provides a power output of 1000 W at a voltage rating of 50 V. It is classified as an RF Power MOSFET under the MOSFets subcategory. The component is currently listed as End of Life or discontinued.

Feature Summary

• Designed for high-power radio frequency applications
• Utilizes silicon-based semiconductor technology
• Capable of delivering significant continuous wave output power

Applications

• Industrial, Scientific, and Medical (ISM) equipment
• Radio frequency heating systems
• Broadband communication infrastructure

Procurement Notes

This component is officially designated as End of Life by the manufacturer. Availability is restricted, and distributors may not stock this item in all regions. Verify current supply status directly with authorized channels before design finalization. Sourcing should focus on remaining inventory or qualified replacement alternatives to ensure long-term project viability.

Selection Notes

Engineers selecting this part must account for its discontinuation status. The device requires specific thermal management due to its high power dissipation capabilities. Ensure that the system design accommodates the 50 V operating voltage and the physical dimensions of the package. Compatibility with existing bias networks and impedance matching circuits should be validated against the official datasheet specifications.

Part Context

The MMRF1306HSR5 belongs to NXP's portfolio of RF power transistors intended for demanding industrial and broadcast environments. It represents a silicon LDMOS solution optimized for efficiency and ruggedness. The 'HSR5' suffix typically denotes a specific reel packaging configuration for surface-mount assembly processes.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.