MMRF1310HSR5

Overview

The MMRF1310HSR5 is a lateral N-channel broadband RF power MOSFET manufactured by NXP USA Inc. utilizing silicon technology. It operates within the frequency range of 1.8 MHz to 600 MHz, delivering an output power of 300 W at a test voltage of 50 V. The device features a gain of 28 dB and a drain-source breakdown voltage (Vds) of 133 V. Packaged in the NI-780H-4 surface-mount format, it supports dual-channel configuration with a maximum operating temperature of +150 °C.

Feature Summary

• Broadband operational capability spanning from 1.8 MHz up to 600 MHz
• High gain performance of 28 dB for efficient signal amplification
• Robust thermal stability supporting operation up to +150 °C
• Lateral N-channel LDMOS construction for high-power RF applications

Applications

• Broadband RF power amplification systems
• Industrial, Scientific, and Medical (ISM) equipment
• General-purpose radio frequency transmission stages

Procurement Notes

Verify component authenticity through authorized channels as this part may be subject to obsolescence. Confirm package integrity upon receipt, as the NI-780H-4 housing requires careful handling. Ensure compliance with RoHS3 standards and check for specific REACH documentation if required by your manufacturing environment. Cross-reference datasheet revisions to confirm electrical parameters match current design requirements.

Selection Notes

Select this component when designing circuits requiring wide bandwidth coverage below 600 MHz with moderate power output. The 50 V rating suits standard supply rails, while the 300 W output handles significant load demands. Consider the surface-mount NI-780H-4 package for automated assembly processes. Evaluate thermal management solutions to maintain junction temperatures within the specified +150 °C limit during continuous operation.

Part Context

This device belongs to the MMRF1310 series of lateral N-channel RF power MOSFETs. It shares the NI-780H-4 package form factor with other high-power variants in the lineup. The series targets broadband applications where consistent gain and power across a wide frequency spectrum are critical. It complements lower-frequency or higher-frequency specialized transistors in comprehensive RF system designs.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.