MMRF1311HR5

Overview

The MMRF1311HR5 is an RF power LDMOS transistor manufactured by NXP USA Inc. It operates within a frequency range of 470MHz to 860MHz and provides a gain of 20dB. The device features a rated voltage of 50V and delivers an output power of 140W. It is housed in the NI-1230-4H package and supplied in Tape & Reel (TR) packaging.

Feature Summary

• Utilizes LDMOS technology for high-frequency RF applications
• Designed for robust performance with 50V rated voltage
• Engineered to deliver 140W output power

Applications

• Broadband RF power amplification
• Base station transmitter modules
• Wireless communication infrastructure

Procurement Notes

Verify that the specific order matches the MMRF1311HR5 part number exactly, including the HR5 suffix which denotes the tape and reel packaging configuration. Confirm compatibility with the NI-1230-4H footprint during integration planning. Ensure sourcing from authorized distributors to guarantee component authenticity and adherence to manufacturer specifications.

Selection Notes

Select this component when designing systems requiring 140W output power within the 470MHz to 860MHz band. The 20dB gain specification supports efficient signal amplification needs. Consider the 50V operating limit and thermal management requirements associated with the NI-1230-4H package for optimal circuit performance.

Part Context

This device belongs to the family of RF power transistors produced by NXP Semiconductors. It shares technological similarities with related models such as the MMRF1310H, focusing on high-power LDMOS solutions for demanding radio frequency environments.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify cross-references through official NXP channels before considering alternative components.