MMRF1314H-1200

Overview

The MMRF1314H is an NXP Semiconductors RF Power LDMOS transistor designed for pulse applications operating between 1200 and 1400 MHz. It delivers up to 1000 W peak output power with a drain efficiency of approximately 52% at 1400 MHz under standard test conditions (VDD = 50 Vdc, IDQ(A+B) = 100 mA). The device features high ruggedness, handling greater than 20:1 VSWR without degradation. Key electrical characteristics include a Drain-Source Breakdown Voltage of 105 Vdc, Gate Threshold Voltage ranging from 1.3 V to 2.3 V, and a Reverse Transfer Capacitance of 2.98 pF.

Feature Summary

• High ruggedness capable of withstanding over 20:1 VSWR at all phase angles without device degradation
• Integrated ESD protection providing enhanced negative gate-source voltage tolerance for improved Class C operation
• Internally input and output matched for broadband operation and ease of use in single-ended or push-pull configurations

Applications

• Military L-Band radar systems
• Commercial L-Band radar systems
• Pulse applications requiring high peak power output

Procurement Notes

Verify the specific package variant required for your design, as the MMRF1314H family includes distinct packages such as NI-1230H-4S (earred), NI-1230S-4S (earless), and NI-1230GS-4L (gull wing). Confirm that the ordering suffix matches the physical footprint and lead configuration needed for your PCB layout. Ensure thermal management solutions align with the specified junction-to-case thermal impedance for the intended duty cycle.

Selection Notes

Select this component for designs requiring high peak power density in the L-Band spectrum. The device supports both single-ended and balanced push-pull topologies. Consider the internal matching network which simplifies broadband design but requires adherence to the recommended reference circuit impedances. Evaluate the thermal dissipation requirements based on the specified duty cycle and case temperature limits to ensure reliable operation within the rated junction temperature range.

Part Context

This part belongs to NXP's AirFast RF Power LDMOS Transistor series, specifically engineered for high ruggedness and efficiency. The MMRF1314H variants share core electrical performance metrics but differ in mechanical packaging to accommodate various mounting styles and assembly processes. These devices represent a solution for demanding radar applications where reliability under mismatched load conditions is critical.

Replacement Considerations

Direct replacements within the same family include MMRF1314HS and MMRF1314GS. Note that these variants utilize different packages (NI-1230S-4S and NI-1230GS-4L respectively) compared to the NI-1230H-4S package of the MMRF1314H. Verify mechanical compatibility and soldering profiles before substitution.

FAQ

What is the maximum VSWR the device can withstand?

The device is qualified to handle greater than 20:1 VSWR at all phase angles without any device degradation.

How does the device handle ESD?

It features integrated ESD protection with a great negative gate-source voltage range, passing Human Body Model tests at 2500 V and Charge Device Model tests at 2000 V.

What is the typical drain efficiency at 1400 MHz?

In a narrowband production test fixture at 1400 MHz with 1000 W peak output, the typical drain efficiency is 52.1%.