MMRF1314HR5

Overview

The MMRF1314HR5 is a dual-channel lateral N-channel broadband RF power MOSFET manufactured by NXP USA Inc. utilizing silicon LDMOS technology. It operates within the 2700 MHz to 2900 MHz frequency range, delivering 320 W of continuous wave output power at 30 V. The device features a NI-1230H-4 package designed for surface mount installation.

Feature Summary

• Broadband operation across the 2700–2900 MHz spectrum
• High power density with 320 W continuous wave output capability
• Dual-channel configuration for efficient circuit design

Applications

• Base station transmitter modules
• Wireless communication infrastructure
• Broadband RF power amplification systems

Procurement Notes

Verify component authenticity through authorized NXP channels due to discontinued status. Confirm package integrity and pin alignment against the NI-1230H-4 specification before integration. Ensure supply chain documentation matches the original manufacturer part number to avoid counterfeit risks in critical RF applications.

Selection Notes

Select this component for designs requiring high linearity and efficiency in the 2.7–2.9 GHz band. Evaluate thermal management requirements given the 320 W output power level. Compare performance metrics against newer generation devices if long-term availability is a primary constraint for the product lifecycle.

Part Context

This device belongs to the MMRF series of RF power transistors from NXP Semiconductors. It represents a specific variant optimized for broadband cellular base station applications. The HR5 suffix typically denotes the reel packaging format used for automated surface mount assembly processes.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material.