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The MMRF1314HSR5 is a dual-channel RF power LDMOS transistor manufactured by NXP Semiconductors. It operates within the 1200 MHz to 1400 MHz frequency range and delivers a peak output power of 1000 W at a drain voltage of 50 V. The device features a gain of 17.7 dB and utilizes an NI-1230-4S surface-mount package. Key electrical specifications include a drain-source breakdown voltage of 105 V, a continuous drain current of 500 mA, and a gate-source threshold voltage of 2.3 V. It supports operation temperatures from -40°C to +150°C.
Verify component authenticity through authorized NXP channels due to discontinued status. Confirm lot traceability and RoHS compliance documentation prior to acquisition. Ensure storage conditions meet moisture sensitivity requirements. Validate package integrity against NI-1230-4S specifications. Cross-reference datasheet revisions for any parameter updates.
Select this component for designs requiring high peak power in the 1.2–1.4 GHz band. Consider the 50 V operating voltage and thermal management needs for the NI-1230-4S package. Evaluate gain requirements against the specified 17.7 dB value. Ensure circuit impedance matching aligns with the device's RF characteristics.
Part of the MMRF1314 series, this LDMOS transistor serves as a high-performance solution for RF power amplification. It complements other NXP RF devices like the MMRF1312H, offering similar power levels but tuned for higher frequency operations up to 1400 MHz. The series targets demanding base station and communication infrastructure applications.
Public confirmed substitute part numbers: MMRF1314H.