MMRF1314HSR5

MMRF1314HSR5

$546.81
  • Description:RF MOSFET LDMOS 50V NI1230
  • Series:-

SKU:a316c4bcfc11 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:RF MOSFET LDMOS 50V NI1230
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Technology:LDMOS
  • Frequency:1.4GHz
  • Gain:17.7dB
  • Voltage - Test:50 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:500 mA
  • Power - Output:1000W
  • Voltage - Rated:105 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:NI-1230-4S
  • Supplier Device Package:NI-1230-4S
  • Configuration:Dual

Download product information

MMRF1314HSR5

Overview

The MMRF1314HSR5 is a dual-channel RF power LDMOS transistor manufactured by NXP Semiconductors. It operates within the 1200 MHz to 1400 MHz frequency range and delivers a peak output power of 1000 W at a drain voltage of 50 V. The device features a gain of 17.7 dB and utilizes an NI-1230-4S surface-mount package. Key electrical specifications include a drain-source breakdown voltage of 105 V, a continuous drain current of 500 mA, and a gate-source threshold voltage of 2.3 V. It supports operation temperatures from -40°C to +150°C.

Feature Summary

  • Dual-channel LDMOS architecture for high-power RF applications
  • Optimized for 1200 MHz to 1400 MHz frequency bands
  • High peak output power capability of 1000 W
  • Surface-mount NI-1230-4S package design

Applications

  • Base station transmitter modules
  • Broadband RF power amplification
  • Military communication systems

Procurement Notes

Verify component authenticity through authorized NXP channels due to discontinued status. Confirm lot traceability and RoHS compliance documentation prior to acquisition. Ensure storage conditions meet moisture sensitivity requirements. Validate package integrity against NI-1230-4S specifications. Cross-reference datasheet revisions for any parameter updates.

Selection Notes

Select this component for designs requiring high peak power in the 1.2–1.4 GHz band. Consider the 50 V operating voltage and thermal management needs for the NI-1230-4S package. Evaluate gain requirements against the specified 17.7 dB value. Ensure circuit impedance matching aligns with the device's RF characteristics.

Part Context

Part of the MMRF1314 series, this LDMOS transistor serves as a high-performance solution for RF power amplification. It complements other NXP RF devices like the MMRF1312H, offering similar power levels but tuned for higher frequency operations up to 1400 MHz. The series targets demanding base station and communication infrastructure applications.

Replacement Considerations

Public confirmed substitute part numbers: MMRF1314H.

MMRF1314HSR5MMRF1314HSR5
$546.81
Buy Now