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Product Detailed Parameters
- Description：RF MOSFET LDMOS 50V TO270-4
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：LDMOS
- Frequency：230MHz
- Gain：27dB
- Voltage - Test：50 V
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：100 mA
- Power - Output：300W
- Voltage - Rated：133 V
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：TO-270-4
- Supplier Device Package：TO-270 WB-4
- Configuration：Dual
Download product information
Overview
The MMRF1316NR1 is a dual-channel LDMOS RF power transistor designed for wideband applications. It operates within a frequency range of 1.8 MHz to 600 MHz, delivering 300 W continuous wave (CW) output power at a 50 V supply voltage. The device features a high ruggedness rating and a rated voltage of 133 V, making it suitable for demanding environments. Packaged in a TO-270 surface-mount format, this component provides high gain and efficiency for broadband radio frequency systems.
Feature Summary
- Dual-channel LDMOS construction for high-power wideband operation
- High ruggedness design capable of withstanding high VSWR conditions
- Surface-mount TO-270 package optimized for thermal performance
Applications
- Military radar systems
- Aerospace communication equipment
- Defense radio communications
Procurement Notes
Verify the exact suffix 'NR1' as it denotes specific packaging or tape-and-reel configuration. Confirm that the component status is obsolete before procurement planning. Ensure compatibility with existing thermal management solutions due to the 300 W power dissipation requirements. Cross-reference datasheet revisions to ensure pinout and electrical characteristics match current system designs.
Selection Notes
Select this component for wideband applications requiring 300 W output between 1.8 MHz and 600 MHz. Consider the TO-270 package size for PCB layout constraints. Evaluate the high ruggedness requirement against expected load mismatch conditions. Verify that the 50 V operating voltage aligns with available power supplies in the target system architecture.
Part Context
This part belongs to NXP's high-ruggedness LDMOS family intended for defense and aerospace sectors. It serves as a high-power amplifier stage in broadband transmitter chains. The dual-channel design allows for balanced push-pull configurations to improve linearity and power density compared to single-channel alternatives.
Replacement Considerations
Public sources indicate MRF300AN as a potential substitute, though both are noted as not recommended for new designs. Verify electrical equivalence and mechanical fit before substitution.
