MMRF1317H-1030

Overview

The MMRF1317H is a high ruggedness N-channel enhancement-mode lateral MOSFET RF power transistor designed for operation between 1020 and 1100 MHz. It delivers 1300 W peak output power at 1030 MHz with 58.1% drain efficiency under 128 µs pulse, 10% duty cycle conditions at 50 Vdc. The device features integrated input and output matching for broadband use, handles >10:1 VSWR without degradation, and includes ESD protection suitable for Class C operation.

Feature Summary

• Internally matched input and output networks facilitate broadband operation and simplify circuit integration.
• High ruggedness design withstands severe load mismatches exceeding 10:1 VSWR at all phase angles.
• Integrated electrostatic discharge protection supports improved Class C operation and gate voltage pulsing.

Applications

• Ground-based secondary surveillance radars
• Identification Friend or Foe (IFF) transponders
• Secondary surveillance radar systems

Procurement Notes

Verify the specific ordering suffix against the manufacturer's current documentation to confirm package type and reel specifications. Confirm that the component meets all environmental compliance requirements relevant to the target deployment region before finalizing procurement orders.

Selection Notes

Select this component for applications requiring high peak power in the 1030–1090 MHz band. Ensure the thermal management system maintains case temperatures within specified limits during pulse operation. Verify that the driving circuitry can provide the necessary gate voltage levels for optimal performance.

Part Context

This LDMOS transistor belongs to the family of high-power RF devices intended for defense and commercial pulse applications. It replaces older technologies by offering higher ruggedness and integrated matching, reducing the complexity of amplifier designs for radar and surveillance systems operating in the UHF band.

Replacement Considerations

Consult official substitution lists for verified equivalents. Direct replacements must match the frequency range, peak power rating, and package dimensions to ensure compatibility with existing board layouts and thermal interfaces.

FAQ

What is the maximum drain-source voltage rating?

The absolute maximum Drain-Source Voltage (VDSS) is rated from -0.5 Vdc to +105 Vdc.

Can the device operate in configurations other than single-ended?

Yes, the device can be used in single-ended, push-pull, or quadrature configurations due to its internal matching.

How does the device perform under mismatched load conditions?

The device exhibits high ruggedness and shows no degradation when subjected to VSWR greater than 10:1 at all phase angles with 3 dB overdrive.