MMRF1317HR5

Overview

The MMRF1317HR5 is an RF power LDMOS transistor manufactured by NXP Semiconductors. It operates within the frequency range of 1030 MHz to 1090 MHz and delivers a peak output power of 1300 W at a drain voltage of 50 V. The device utilizes silicon technology and is housed in the NI-1230S-4L2L surface-mount package. Designed for high-power applications, it supports operation temperatures from -40°C to +150°C.

Feature Summary

• High peak output power capability of 1300 W
• Broadband operation across the 1030-1090 MHz band
• Robust thermal performance with a maximum junction temperature of 150°C

Applications

• Base station amplifiers
• Broadcast transmitters
• Electronic warfare systems

Procurement Notes

Verify the specific suffix 'R5' against official documentation to confirm reel packaging specifications. Ensure compatibility with the NI-1230S-4L2L footprint during procurement. Confirm current lifecycle status as distribution availability may vary. Cross-reference datasheet revisions to ensure design integrity.

Selection Notes

Select this component for designs requiring high peak power in the L-band spectrum. Evaluate thermal management requirements given the 150°C operating limit. Compare gain and efficiency metrics against alternative LDMOS devices for optimal system performance. Verify impedance matching networks suit the broadband operational range.

Part Context

This part belongs to NXP's MMRF series of RF power LDMOS transistors. These components are engineered for demanding radio frequency environments. The series offers various power levels and frequency bands to support diverse infrastructure needs. The MMRF1317H variant specifically targets high-power L-band applications.

Replacement Considerations

Consult official substitution lists for verified equivalents. Generic replacements may not match the specific electrical characteristics or thermal profile.