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The MMRF1318NR1 is an RF power LDMOS transistor manufactured by NXP Semiconductors. It operates within a frequency range of 10 MHz to 600 MHz, delivering a continuous wave (CW) output power of 300 W at a supply voltage of 50 V. The device features a gain of 22 dB and utilizes a TO-270-4 package. Designed for broadband applications, it serves as a driver or large-signal output stage in RF systems.
Verify the component status carefully, as the MMRF1318NR1 is listed as obsolete in official distributor records. Confirm availability through authorized channels or secondary markets if current production is required. Ensure that the TO-270-4 package dimensions match your thermal and mechanical design constraints before finalizing procurement plans.
Select this component when a broadband solution covering up to 600 MHz with 300 W CW power is required. The 50 V operating voltage and 22 dB gain make it suitable for direct integration into standard RF architectures. Consider the obsolete lifecycle status and evaluate long-term supply chain stability for new designs.
This part belongs to NXP's portfolio of RF power LDMOS transistors designed for high-efficiency broadband amplification. It complements other devices in the series offering varying power levels and frequency ranges, providing engineers with scalable solutions for RF front-end modules and transmitter chains.
Public confirmed substitute part numbers are not available in the provided documentation due to the component's obsolete status. Engineers should consult NXP technical support for potential legacy replacements or evaluate newer generation LDMOS devices with similar electrical specifications.
The MMRF1318NR1 provides a maximum CW output power of 300 W.
The device supports a broadband frequency range from 10 MHz to 600 MHz.