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The MMRF2004NBR1 is an RF LDMOS integrated power amplifier designed for general-purpose applications in the 1600 to 2200 MHz frequency range. It supports Class A and Class AB operation, suitable for both analog and digital modulation schemes. The device features internal matching for ease of integration and includes integrated ESD protection. It is qualified for operation up to a maximum drain voltage of 32 V and can handle a 5:1 VSWR at 28 Vdc with 10 W CW output power at 2000 MHz. The component is RoHS compliant and supplied in tape and reel packaging.
Verify the specific suffix 'BR1' corresponds to the required tape and reel quantity and width specifications. Confirm that the operating frequency range of 1600 to 2200 MHz aligns with the target application band. Ensure the system design accommodates the maximum 32 V drain voltage qualification limit. Check for any updated environmental compliance documentation relative to the manufacturing date code.
Select this component for broadband RF applications requiring linear amplification between 1600 and 2200 MHz. It is appropriate for designs needing robust VSWR tolerance and simplified impedance matching. Consider the thermal characteristics and package capabilities when designing the heat dissipation strategy. Verify compatibility with the intended modulation scheme's linearity requirements.
This part belongs to NXP's portfolio of RF LDMOS power devices, which are engineered for high performance in wireless infrastructure. These transistors typically offer high gain and efficiency across wide bandwidths. The MMRF series is widely used in cellular base stations and other communication equipment requiring reliable RF power generation.
Check for direct cross-reference part numbers from NXP or other manufacturers offering identical pinouts and electrical specifications. Verify that any substitute device meets the same frequency range, power output, and voltage qualification standards. Ensure thermal and mechanical compatibility if replacing in an existing assembly.