MMRF2005GNR1

MMRF2005GNR1

  • Description:RF MOSFET LDMOS
  • Series:*

SKU:b2868db3395d Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET LDMOS
  • Series:*
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:-
  • Frequency:-
  • Gain:-
  • Voltage - Test:-
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:-
  • Power - Output:-
  • Voltage - Rated:-
  • Grade:-
  • Qualification:-
  • Mounting Type:-
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MMRF2005GNR1

Overview

The MMRF2005GNR1 is a wideband integrated RF LDMOS power amplifier designed for operation from 728 to 960 MHz. It features on-chip matching, including a 50-ohm input and DC-blocked output greater than 5 ohms. The device supports operating voltages of 24 to 32 Vdc and delivers an average output power of 3.2 W at 28 Vdc. It includes integrated quiescent current temperature compensation with enable/disable functionality and built-in ESD protection.

Feature Summary

  • On-chip impedance matching simplifies circuit design by providing a 50-ohm input interface.
  • Integrated quiescent current temperature compensation ensures stable biasing across varying thermal conditions.
  • Built-in electrostatic discharge (ESD) protection enhances component reliability during handling.

Applications

  • Radio communications systems
  • Data links
  • UHF radar applications

Procurement Notes

Verify the specific suffix 'GNR1' corresponds to the TO-270WBG-16 plastic package configuration. Confirm that the ordering information matches the required tape and reel specifications for automated assembly processes. Ensure compatibility with the intended operating voltage range of 24 to 32 Vdc before finalizing procurement.

Selection Notes

Select this component for broadband applications requiring consistent performance between 728 and 960 MHz. Consider its suitability for driver stages in radio communication and UHF radar systems. Evaluate the need for integrated thermal tracking and ESD protection as key differentiators for robust system design.

Part Context

This device belongs to the Freescale Semiconductor RF LDMOS wideband integrated power amplifier family. It is engineered for multi-stage structures rated for high-voltage operation. The product line targets demanding RF environments requiring reliable amplification within the specified frequency band.

Replacement Considerations

Consult official documentation for verified substitute part numbers. Cross-reference electrical characteristics and pin configurations carefully when considering alternative components.

FAQ

What is the maximum drain-source voltage rating?

The absolute maximum drain-source voltage rating is +65 Vdc.

Does the device include internal matching networks?

Yes, the MMRF2005GNR1 features on-chip matching with a 50-ohm input and a DC-blocked output greater than 5 ohms.

How does the device handle thermal variations?

It incorporates integrated quiescent current temperature compensation with an enable or disable function to maintain stability.

MMRF2005GNR1MMRF2005GNR1

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