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The MMRF2007NR1 is a general-purpose driver transistor utilizing LDMOS technology. It operates within the 136–940 MHz frequency band with an average output power of 35 Watts at a drain voltage of 28 Volts. The device provides typical gain of 32.6 dB measured at 940 MHz and achieves an efficiency of 42.1%. Thermal management is supported by a junction-to-case thermal resistance of 0.6 °C/W, and it is housed in a TO-270WBL-16 package.
Verify component authenticity through authorized NXP channels or certified distributors. Confirm that the specific ordering suffix matches the required package variant and manufacturing date code. Ensure compliance with ITAR regulations if applicable to the end-use environment. Request official datasheets and test reports to validate performance parameters against design specifications before integration.
Select this component for designs requiring broadband coverage from 136 to 940 MHz with moderate power output. The 28-volt operating point suits systems prioritizing lower voltage regulation compared to 50-volt alternatives. Consider the TO-270WBL-16 package for its thermal efficiency and mounting flexibility in high-power RF amplifier stages.
This device belongs to NXP's RF Aerospace and Defense portfolio, specifically categorized under general-purpose driver transistors. It complements higher-power final stage devices like the MMRF1317H in multi-stage amplifier architectures. The product line emphasizes domestic manufacturing capabilities and long-term supply security for critical defense electronics.
The MMRF2007GNR1 serves as a verified alternative offering identical electrical characteristics within a green (lead-free) compliant package. Designers must verify pinout compatibility and thermal interface requirements when substituting between standard and green variants.