MMRF2010GNR1

Overview

The MMRF2010GNR1 is a two-stage RF LDMOS integrated power amplifier designed for IFF transponder applications operating from 1030 to 1090 MHz. It delivers 250 W peak output power at 50 Vdc with a typical power gain of 34.1 dB and second stage efficiency of 61.0%. The device features on-chip input and interstage matching, single-ended configuration, and integrated ESD protection. It includes low thermal resistance and integrated quiescent current temperature compensation with an enable/disable function.

Feature Summary

• Characterized over the 1030–1090 MHz frequency range
• Features on-chip input (50 ohm) and interstage matching
• Includes integrated quiescent current temperature compensation with enable/disable function

Applications

• Driver PA for high power pulse applications
• IFF (Identification Friend or Foe) systems
• Secondary radar transponders

Procurement Notes

Verify the specific ordering suffix 'GNR1' against the manufacturer's official documentation to confirm package type and reel specifications. Ensure compatibility with the required TO-270WBG-14 plastic package dimensions and lead forming configurations before finalizing procurement orders.

Selection Notes

Select this component for designs requiring high peak power in the 1030–1090 MHz band. Consider the 50 Vdc operating voltage and the need for appropriate thermal management given the junction-to-case thermal impedance characteristics. Verify that the application supports the specified pulse duty cycles and load mismatch ruggedness requirements.

Part Context

This part belongs to NXP Semiconductors' RF LDMOS Wideband Integrated Power Amplifiers family. It is specifically engineered for pulse applications such as IFF and secondary radar transponders. The device integrates multiple stages into a single package to simplify circuit design while maintaining high performance metrics.

Replacement Considerations

Consult official NXP documentation for verified substitute part numbers. No direct public substitutes are listed in the provided datasheet.

FAQ

What is the maximum drain-source voltage rating?

The maximum Drain-Source Voltage (VDSS) rating is -0.5 to +100 Vdc.

Does the device include internal matching networks?

Yes, the MMRF2010GNR1 features on-chip input (50 ohm) and interstage matching.

What is the operating frequency range?

The device is characterized for operation from 1030 to 1090 MHz.