MMRF5015NR5

Overview

The MMRF5015NR5 is a depletion-mode GaN-on-SiC RF power transistor designed for wideband applications up to 2700 MHz. It delivers 125 W CW output at 50 Vdc and 2500 MHz with 64.2% drain efficiency. The device features internal input matching, high ruggedness exceeding 20:1 VSWR, and operates within a junction temperature range of -55°C to +225°C.

Feature Summary

• Decade bandwidth performance optimized for wideband operation
• Plastic package providing improved thermal resistance
• Advanced GaN on SiC technology for high power density
• High ruggedness capable of withstanding severe load mismatches

Applications

• Narrowband and multi-octave wideband amplifiers
• Military radar systems
• Electronic countermeasures (ECM) jammers
• Public mobile radios including emergency service equipment

Procurement Notes

Verify the specific ordering suffix R5 indicates a reel quantity of 50 units with a 24 mm tape width on a 7-inch reel. Confirm that the component is sourced from Freescale Semiconductor or its successor entity NXP Semiconductors. Ensure compliance with RoHS standards and check for any applicable material declarations before procurement.

Selection Notes

Select this component for designs requiring broad frequency coverage from 200 MHz to 2700 MHz. The integrated input matching simplifies circuit design by reducing external components. Consider the OM-270-2 plastic package dimensions and thermal requirements when designing heatsinking solutions for continuous wave operations.

Part Context

This part belongs to the MMRF5015N series of wideband RF power transistors. It utilizes an OM-270-2 plastic package configuration. The device represents a transition from traditional silicon LDMOS technologies to Gallium Nitride on Silicon Carbide platforms for higher power density and efficiency in military and commercial radio applications.

Replacement Considerations

No direct public substitute part numbers are confirmed in the provided documentation. Designers should evaluate alternative GaN devices based on similar voltage ratings and bandwidth requirements if this discontinued model is unavailable.

FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature range extends up to +225°C.

How does the device handle load mismatches?

The transistor exhibits high ruggedness, maintaining no device degradation under pulse conditions with VSWR greater than 20:1 at all phase angles.

Is the input impedance matched internally?

Yes, the device includes internal input matching to facilitate extended wideband performance and simplify amplifier design.