MMRF5017HS-1GHZ

MMRF5017HS-1GHZ

  • Description:RF MOSFET
  • Series:*

SKU:b1ec2c5973db Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET
  • Series:*
  • Mfr:NXP USA Inc.
  • Package:Tray
  • Technology:-
  • Frequency:-
  • Gain:-
  • Voltage - Test:-
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:-
  • Power - Output:-
  • Voltage - Rated:-
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:-
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MMRF5017HS-1GHZ

Overview

The MMRF5017HS is a 125 W CW RF power GaN transistor on SiC, operating from 30 to 2200 MHz. It features input matching for extended bandwidth and high ruggedness exceeding 10:1 VSWR. Key electrical parameters include a drain-source breakdown voltage of 150 Vdc, gate threshold voltage ranging from -3.8 to -2.3 Vdc, and total device dissipation of 154 W at 25°C case temperature. The component utilizes an NI-400S-2S package with the backside serving as the source terminal.

Feature Summary

  • Advanced GaN on SiC technology providing high power density
  • Decade bandwidth performance capability
  • Input matched for extended wideband operation
  • High ruggedness supporting greater than 10:1 VSWR

Applications

  • Narrowband and multi-octave wideband amplifiers
  • Radar systems
  • Jammers
  • EMC testing
  • Public mobile radios including emergency service radios

Procurement Notes

Verify the specific suffix against the ordering information table in the datasheet to confirm tape and reel specifications. Ensure compatibility with the NI-400S-2S package dimensions and thermal requirements. Confirm that the application frequency range falls within the guaranteed 30 to 2200 MHz band for performance validation.

Selection Notes

Select this component for broadband applications requiring high gain and ruggedness. Consider the thermal resistance values for heat sinking design. Verify biasing sequences carefully to prevent damage during turn-on and turn-off operations. Evaluate impedance matching networks based on the provided source and load impedance data across the frequency range.

Part Context

This device belongs to NXP's RF Power GaN Transistor family, designed for military and commercial end-use applications. It supports CW, pulse, and broadband RF operations. The product documentation includes reference circuits and application notes for soldering and thermal measurement methodologies.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

FAQ

What is the maximum channel temperature?

The absolute maximum channel temperature is 350°C.

How should the device be turned off?

Turn off RF power, reduce VGS down to -5V, then reduce VDS down to 0V before turning off VGS.

Is performance guaranteed outside the 30 to 2200 MHz band?

No, there is no guarantee of performance when used in applications designed outside these frequencies.

MMRF5017HS-1GHZMMRF5017HS-1GHZ

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