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The MMRF5017HS is a 125 W CW RF power GaN transistor on SiC, operating from 30 to 2200 MHz. It features input matching for extended bandwidth and high ruggedness exceeding 10:1 VSWR. Key electrical parameters include a drain-source breakdown voltage of 150 Vdc, gate threshold voltage ranging from -3.8 to -2.3 Vdc, and total device dissipation of 154 W at 25°C case temperature. The component utilizes an NI-400S-2S package with the backside serving as the source terminal.
Verify the specific suffix against the ordering information table in the datasheet to confirm tape and reel specifications. Ensure compatibility with the NI-400S-2S package dimensions and thermal requirements. Confirm that the application frequency range falls within the guaranteed 30 to 2200 MHz band for performance validation.
Select this component for broadband applications requiring high gain and ruggedness. Consider the thermal resistance values for heat sinking design. Verify biasing sequences carefully to prevent damage during turn-on and turn-off operations. Evaluate impedance matching networks based on the provided source and load impedance data across the frequency range.
This device belongs to NXP's RF Power GaN Transistor family, designed for military and commercial end-use applications. It supports CW, pulse, and broadband RF operations. The product documentation includes reference circuits and application notes for soldering and thermal measurement methodologies.
No public confirmed substitute part numbers are available in the provided documentation.
The absolute maximum channel temperature is 350°C.
Turn off RF power, reduce VGS down to -5V, then reduce VDS down to 0V before turning off VGS.
No, there is no guarantee of performance when used in applications designed outside these frequencies.