MMRF5017HSR5

Overview

The MMRF5017HSR5 is a GaN on SiC RF power transistor designed for broadband operation from 30 to 2200 MHz. It delivers up to 125 W CW output at 520 MHz with 50 V drain bias and includes integrated input matching. The device features high ruggedness, supporting greater than 10:1 VSWR without degradation. Electrical characteristics include a drain-source breakdown voltage of 150 Vdc and a gate threshold voltage typically around -3.0 Vdc. It utilizes an NI-400S-2S package and is supplied in a tape and reel format containing 50 units.

Feature Summary

• Advanced GaN on SiC technology providing high power density
• Decade bandwidth performance covering 30 to 2200 MHz
• Integrated input matching network for extended wideband capability
• High ruggedness rated for greater than 10:1 VSWR

Applications

• Military narrowband and multi-octave wideband amplifiers
• Radar systems
• Electronic countermeasures (ECM) jammers
• Public mobile radios including emergency service equipment
• Industrial, scientific and medical (ISM) applications

Procurement Notes

Verify the specific ordering suffix R5 confirms the 50-unit tape and reel packaging configuration. Confirm that the NI-400S-2S package dimensions align with the intended PCB footprint. Ensure thermal management solutions accommodate the specified maximum channel temperature limits during operation.

Selection Notes

Select this component for designs requiring broad frequency coverage without discrete input matching networks. Evaluate thermal resistance values against the expected case operating temperatures. Verify that the supply voltage remains within the 0 to +55 Vdc range to prevent damage.

Part Context

This part belongs to the MMRF5017HS series of RF power transistors manufactured by NXP Semiconductors. It represents a specialized solution for high-power RF applications where wideband performance and reliability are critical requirements.

Replacement Considerations

No public confirmed substitute part numbers are documented in the provided datasheet.

FAQ

What is the guaranteed operating frequency range?

Performance is guaranteed for applications operating in the 30 to 2200 MHz band.

How does the device handle load mismatch conditions?

The device exhibits high ruggedness and shows no degradation when subjected to greater than 10:1 VSWR at all phase angles.

What is the correct biasing sequence for turning the device ON?

Set VGS to -5 V, turn on VDS to nominal supply voltage, increase VGS until IDS current is attained, then apply RF input power.