MMRF5018HS-450

Overview

The MMRF5018HS is a 125 W CW RF power transistor optimized for wideband operation up to 2700 MHz. It features advanced GaN on SiC technology and includes internal input matching for extended bandwidth performance. The device is characterized and guaranteed for applications operating in the 1–2700 MHz band, with typical performance specified at VDD = 50 Vdc, TA = 25°C, and IDQ = 200 mA. In the 450–2700 MHz range, it delivers 100 W CW output with 12.0 dB gain and 40% drain efficiency. It exhibits high ruggedness, sustaining > 20:1 VSWR at all phase angles without degradation under pulse conditions.

Feature Summary

• Advanced GaN on SiC technology providing high power density
• Decade bandwidth performance covering 1–2700 MHz
• Internal input matching for simplified wideband design
• High ruggedness exceeding 20:1 VSWR tolerance

Applications

• Military narrowband and multi-octave wideband amplifiers
• Radar systems
• Electronic countermeasures jammers
• EMC testing equipment
• Public mobile radios including emergency service communications

Procurement Notes

Verify the specific ordering suffix against official NXP documentation to confirm packaging details such as tape width and reel size. Ensure that the procurement channel sources components directly from authorized distributors or the manufacturer to guarantee authenticity. Confirm that the received part matches the exact MMRF5018HS designation, as suffixes may indicate variations in reel configuration rather than functional differences.

Selection Notes

Select this component for designs requiring broad frequency coverage from 1 to 2700 MHz with high power output. The internal input matching reduces external circuit complexity for wideband applications. Verify thermal management capabilities, as the device operates with a maximum channel temperature of 350°C. Ensure biasing sequences strictly follow depletion mode requirements to prevent gate-source breakdown during power-up and power-down cycles.

Part Context

This device belongs to NXP's Airfast series of RF power transistors utilizing Gallium Nitride on Silicon Carbide (GaN on SiC) technology. It is designed to replace older LDMOS solutions where wider bandwidth and higher power density are critical. The NI-400S-2SA package provides enhanced thermal resistance suitable for high-power RF environments.

Replacement Considerations

No public confirmed substitute part numbers are documented in the provided datasheet.

FAQ

Is the MMRF5018HS internally input matched?

Yes, the device includes internal input matching to facilitate extended wideband performance and simplify circuit design.

What is the maximum channel temperature rating?

The maximum channel temperature (TCH) is rated at 350°C, although operation at this limit will reduce median time to failure.

How does the device perform under load mismatch conditions?

The device demonstrates high ruggedness, showing no degradation when subjected to > 20:1 VSWR at all phase angles under pulse test conditions.