MMRF5018HSR5

Overview

The MMRF5018HSR5 is a 125 W CW RF power transistor utilizing GaN on SiC technology, optimized for wideband operation from 450 MHz to 2700 MHz. It features an internal input matching network and operates at a drain-source voltage of 50 Vdc with a quiescent current of 200 mA. The device delivers a typical power gain of 12.0 dB and a drain efficiency of 40.0% across the specified frequency range. It is housed in an NI-400S-2SA package and supports rugged pulse applications exceeding 20:1 VSWR.

Feature Summary

• Advanced GaN on SiC technology providing high power density
• Decade bandwidth performance covering 450–2700 MHz
• Internal input matching for extended wideband capability
• High ruggedness supporting greater than 20:1 VSWR

Applications

• Military narrowband and multi-octave wideband amplifiers
• Radar systems
• Electronic countermeasures jammers
• EMC testing equipment
• Public mobile radios including emergency service units

Procurement Notes

Verify the specific ordering suffix R5 corresponds to the required tape and reel configuration containing 50 units on a 32 mm width, 13-inch reel. Confirm that the base part number MMRF5018HS matches the technical specifications provided in the official datasheet before finalizing procurement orders.

Selection Notes

Select this component for designs requiring wideband coverage up to 2700 MHz without external input matching networks. Ensure thermal management accommodates the maximum channel temperature limit of 350°C. Verify that the application operates within the guaranteed 1–2700 MHz band to maintain performance guarantees.

Part Context

This device belongs to NXP's Airfast series of RF power transistors designed for demanding communication environments. It utilizes Gallium Nitride on Silicon Carbide material science to achieve superior power density compared to traditional silicon LDMOS technologies, enabling compact amplifier designs.

Replacement Considerations

No public confirmed substitute part numbers are documented in the source material.

FAQ

What is the maximum operating frequency for this transistor?

The device is characterized and performance is guaranteed for applications operating up to 2700 MHz.

Does the MMRF5018HSR5 require external input matching components?

No, the device includes an internal input matching network for extended wideband performance.

What is the load mismatch ruggedness rating?

The device exhibits high ruggedness, maintaining no degradation under greater than 20:1 VSWR at all phase angles during pulse testing.