MMZ25332BT1

RF Amplifiers Overview

The MMZ25332BT1 is a two-stage, high linearity InGaP HBT broadband amplifier manufactured by NXP Semiconductors. It operates within the frequency range of 1500 MHz to 2800 MHz and provides a gain of 26.5 dB. The device is designed for medium power applications, featuring a saturated output power (Psat) of 31 dBm. It utilizes a compact 12-QFN (3x3 mm) surface-mount package suitable for space-constrained wireless designs.

RF Amplifiers Feature Summary

• Two-stage InGaP HBT architecture ensuring high linearity performance
• Broadband operation covering 1500 MHz to 2800 MHz
• Compact 12-QFN surface-mount package design

RF Amplifiers Applications

• Femtocell infrastructure
• Picocell systems
• WLAN (802.11g/n)
• W-CDMA networks
• TD-SCDMA and LTE standards

RF Amplifiers Procurement Notes

Verify component authenticity through authorized NXP channels due to end-of-life status. Confirm lot traceability and RoHS compliance via official documentation. Check for obsolescence notices or lifecycle changes on the manufacturer website before finalizing procurement plans.

RF Amplifiers Selection Notes

Select this component for applications requiring high linearity in the 1.5–2.8 GHz range. Ensure thermal management supports the medium power output. Verify that the 12-QFN footprint matches the PCB layout constraints and that the supply voltage aligns with system requirements.

RF Amplifiers Part Context

This part belongs to the MMZ25332B series of RF amplifiers from NXP Semiconductors. It is engineered specifically for base station and small cell environments where signal integrity and bandwidth are critical. The technology leverages Indium Gallium Phosphide heterojunction bipolar transistor processes for superior performance.

RF Amplifiers Replacement Considerations

The product is listed as End-of-Life (EOL). No direct public substitute part numbers are confirmed in the provided documentation. Engineers should consult NXP for recommended alternatives or transition plans.