MPF102_D27Z

Overview

The MPF102_D27Z is an N-channel RF amplifier and analog switch manufactured by onsemi (formerly Fairchild Semiconductor). It operates within a drain-gate voltage of 25 V and a gate-source voltage of -25 V. The device features a zero-gate voltage drain current ranging from 2.0 to 20 mA and a forward transconductance between 2000 and 7500 μS at 1 kHz. Thermal dissipation reaches 350 mW with a junction-to-ambient resistance of 357 °C/W. Input capacitance is typically 7.0 pF, while reverse transfer capacitance is 3.0 pF at 1 MHz. The component utilizes a TO-92G package and supports operating temperatures from -55 to +155 °C.

Feature Summary

• Designed for electronic switching applications requiring low ON resistance analog switching capabilities.
• Integrated dual ADC architecture enables synchronous voltage and current measurements for cell and pack impedance monitoring.

Applications

• Low ON resistance analog switching
• Electronic switching circuits

Procurement Notes

Verify the manufacturer designation carefully, as the datasheet indicates Fairchild Semiconductor origin while the model prefix suggests onsemi lineage. Confirm the specific ordering suffix matches the required lead-free status and package variant. Ensure the procurement channel provides valid traceability documentation for this discontinued or legacy component series.

Selection Notes

Select this component when designing circuits that require an N-channel enhancement mode MOSFET for RF amplification or analog signal routing. Evaluate the thermal constraints against the specified junction-to-ambient resistance if operating near maximum power dissipation limits. Consider the gate-source cutoff voltage characteristics for appropriate logic level interfacing in switching applications.

Part Context

This part belongs to the MPF102 family of N-channel RF amplifiers originally developed by Fairchild Semiconductor. The D27Z suffix typically denotes specific packaging and environmental compliance attributes. As a legacy silicon-based MOSFET, it serves foundational roles in older RF designs and general-purpose analog switching systems where high-frequency performance is secondary to robust switching characteristics.

Replacement Considerations

Consult official cross-reference lists for direct pin-compatible alternatives. Verify that substitute devices maintain equivalent gate-source breakdown voltages and transconductance ranges to ensure circuit stability without redesigning bias networks.