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The MPF102G is an N-channel depletion-mode Junction Field-Effect Transistor (JFET) designed for VHF amplifier applications. It operates within a Drain-Source Voltage (VDS) of 25 Vdc and a Gate-Source Voltage (VGS) range of -25 Vdc to +7.5 Vdc. The device features a Zero-Gate-Voltage Drain Current (IDSS) between 2.0 mA and 20 mA, with a Forward Transfer Admittance (|yfs|) ranging from 1600 µmhos at 100 MHz to 7500 µmhos at 1.0 kHz. Electrical characteristics are specified at TA = 25°C, with a maximum junction temperature of 125°C and total device dissipation of 350 mW at 25°C ambient.
Verify the component against the official ON Semiconductor datasheet MPF102/D Rev. 3. Confirm the TO-92 package marking matches the specified assembly code format. Ensure the ordering suffix 'G' corresponds to the lead-free package variant as documented in the manufacturer's specifications before finalizing procurement.
Select this component when designing VHF amplifier stages requiring an N-channel depletion-mode JFET. Verify that the required IDSS falls within the 2.0 mA to 20 mA range and that the circuit can accommodate the specified VGS(off) limits. Ensure thermal management supports the 350 mW dissipation rating at the intended operating ambient temperature.
The MPF102G belongs to the MPF102 family of preferred devices manufactured by ON Semiconductor. It is categorized as a JFET VHF Amplifier transistor. The 'G' suffix indicates a lead-free package option, aligning with the manufacturer's environmental product compliance strategy for this specific TO-92 component series.
Publicly confirmed substitute part numbers are not available in the provided documentation. Cross-referencing requires matching N-channel depletion-mode JFET electrical parameters and TO-92 package dimensions.