MPS3706 TIN/LEAD

$0.22

Description：20V 600MA 625MW TH TRANSISTOR-SM
Series：-

SKU:e2a81f497218 Category: Single Bipolar Transistors Brand: Central Semiconductor Corp

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Product introduction

MPS3706 TIN/LEAD is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Central Semiconductor Corp. Its product description is 20V 600MA 625MW TH TRANSISTOR-SM. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for MPS3706 TIN/LEAD

Description：20V 600MA 625MW TH TRANSISTOR-SM
Series：-
Mfr：Central Semiconductor Corp
Package：Box
Transistor Type：NPN
Current - Collector (Ic) (Max)：600 mA
Voltage - Collector Emitter Breakdown (Max)：20 V
Vce Saturation (Max) @ Ib, Ic：1V @ 5mA, 100mA
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：30 @ 50mA, 2V
Power - Max：625 mW
Frequency - Transition：100MHz
Operating Temperature：-65°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package：TO-92-3
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for MPS3706 TIN/LEAD

MPS3706 TIN/LEAD

Single Bipolar Transistors Overview

The MPS3706 is a single silicon NPN bipolar junction transistor designed for through-hole mounting. It features a maximum collector-emitter voltage of 40 V and a maximum collector-base voltage of 50 V. The device supports a continuous collector current of 100 mA with a power dissipation rating of 500 mW. Key electrical characteristics include a DC current gain (hFE) range of 100 to 300 at a collector current of 2 mA, and a collector-emitter saturation voltage of no more than 250 mV at 10 mA base drive. The transition frequency is specified at 150 MHz under standard test conditions.

Single Bipolar Transistors Feature Summary

NPN silicon construction optimized for general-purpose switching and amplification applications
High DC current gain capability ensuring efficient signal control with low base drive requirements
Robust thermal performance with a maximum operating junction temperature of 200°C

Single Bipolar Transistors Applications

General-purpose amplifier circuits
Switching applications in consumer electronics
Driver stages for relay or LED loads

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix to confirm the lead material composition, as the TIN/LEAD designation indicates non-compliant plating. Ensure compliance with RoHS directives if required by your manufacturing standards. Cross-reference the manufacturer's datasheet for absolute maximum ratings to prevent device failure during operation. Confirm package dimensions match your PCB footprint requirements before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component when a standard NPN transistor with moderate voltage handling and high current gain is required. The 40 V breakdown voltage suits low-voltage logic interfaces. Consider the TO-92 package constraints for thermal management in enclosed designs. Evaluate alternative packages if higher power dissipation capabilities are necessary for the target application environment.

Single Bipolar Transistors Part Context

Central Semiconductor manufactures the MPS3706 within its portfolio of discrete semiconductor devices. This part belongs to the broader category of small-signal bipolar transistors used across various electronic industries. The company provides technical documentation detailing electrical limits and testing procedures to support design engineers in integrating these components into reliable systems.