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The MQ2N4092UB/TR is a single N-channel Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. It utilizes silicon technology and is housed in an SMD-3 surface-mount package designed for automated assembly. The device features a drain-source breakdown voltage of 30 V and a gate-source breakdown voltage of -30 V. Key electrical characteristics include a zero-gate-voltage drain current of 15 mA, a continuous drain current of 175 mA, and a maximum power dissipation of 1.8 W. The component operates within a temperature range from -65°C to +200°C.
Verify the specific datasheet revision and environmental compliance documentation directly with Microchip Technology prior to implementation. Confirm that the SMD-3 footprint matches the target PCB layout requirements. Ensure that thermal management strategies account for the specified power dissipation limits under all expected operating conditions.
Select this component when a surface-mount JFET is required for high-temperature environments exceeding standard industrial ranges. Compare the 1.8 W power dissipation capability against alternative through-hole packages if higher thermal mass is needed. Evaluate the 15 mA drain current specification against circuit biasing requirements to ensure proper operational margins.
This part belongs to the Microchip MQ2N series of single N-channel JFETs. The series offers variants in both through-hole TO-18 and surface-mount configurations. The MQ2N4092UB/TR specifically addresses the need for robust semiconductor devices capable of maintaining performance in extreme thermal conditions common in aerospace or specialized industrial applications.
Cross-reference with other MQ2N series parts such as MQ2N4091 or MQ2N4859 for pin-compatible alternatives with different current ratings. Verify that substitute components maintain the same SMD-3 package outline and thermal specifications.