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The MQ2N4858 is a silicon N-channel Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. It is designed for surface-mount applications in an SMD-3 package. The device features a drain-source breakdown voltage of 30 V and a gate-source breakdown voltage of 30 V. It supports a continuous drain current of 175 mA with a maximum power dissipation of 1.8 W. The component operates within a temperature range of -65°C to +200°C.
Verify the specific ordering suffix and packaging configuration directly with Microchip Technology or authorized distributors before procurement. Confirm that the SMD-3 package variant matches the design requirements. Ensure compliance with RoHS status as indicated in official documentation, noting that some variants may not be compliant. Cross-reference the manufacturer part number with ECAD models for accurate footprint integration.
Select this component when a surface-mount N-channel JFET with a 30 V breakdown voltage and 175 mA current capability is required. Consider the 1.8 W power dissipation rating and the extended operating temperature range up to 200°C for thermal management. Verify compatibility with the SMD-3 package dimensions against the PCB layout constraints.
This component belongs to the Microchip Technology JFET product line, specifically utilizing silicon technology. It is categorized under transistors and is intended for use in applications requiring reliable field-effect switching or amplification in compact surface-mount designs.
Consult Microchip Technology for officially confirmed substitute part numbers. Do not assume pin-compatible alternatives without verifying electrical parameters and package dimensions against the original datasheet.