MQ2N4858

MQ2N4858

$45.38
  • Description:JFET N-CH 40V TO18
  • Series:-

SKU:041b6a0e4bb5 Category: Brand:

  
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Product Detailed Parameters

  • Description:JFET N-CH 40V TO18
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • FET Type:N-Channel
  • Voltage - Breakdown (V(BR)GSS):40 V
  • Drain to Source Voltage (Vdss):40 V
  • Current - Drain (Idss) @ Vds (Vgs=0):8 mA @ 15 V
  • Current Drain (Id) - Max:-
  • Voltage - Cutoff (VGS off) @ Id:800 mV @ 500 pA
  • Input Capacitance (Ciss) (Max) @ Vds:18pF @ 10V
  • Resistance - RDS(On):60 Ohms
  • Power - Max:360 mW
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package:TO-18 (TO-206AA)
  • Grade:-
  • Qualification:-

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MQ2N4858

Overview

The MQ2N4858 is a silicon N-channel Junction Field-Effect Transistor (JFET) manufactured by Microchip Technology. It is designed for surface-mount applications in an SMD-3 package. The device features a drain-source breakdown voltage of 30 V and a gate-source breakdown voltage of 30 V. It supports a continuous drain current of 175 mA with a maximum power dissipation of 1.8 W. The component operates within a temperature range of -65°C to +200°C.

Feature Summary

  • Utilizes silicon technology for robust performance
  • Supports high-temperature operation up to 200°C
  • Designed for surface-mount installation

Applications

  • High-temperature electronic circuits
  • Surface-mount transistor assemblies

Procurement Notes

Verify the specific ordering suffix and packaging configuration directly with Microchip Technology or authorized distributors before procurement. Confirm that the SMD-3 package variant matches the design requirements. Ensure compliance with RoHS status as indicated in official documentation, noting that some variants may not be compliant. Cross-reference the manufacturer part number with ECAD models for accurate footprint integration.

Selection Notes

Select this component when a surface-mount N-channel JFET with a 30 V breakdown voltage and 175 mA current capability is required. Consider the 1.8 W power dissipation rating and the extended operating temperature range up to 200°C for thermal management. Verify compatibility with the SMD-3 package dimensions against the PCB layout constraints.

Part Context

This component belongs to the Microchip Technology JFET product line, specifically utilizing silicon technology. It is categorized under transistors and is intended for use in applications requiring reliable field-effect switching or amplification in compact surface-mount designs.

Replacement Considerations

Consult Microchip Technology for officially confirmed substitute part numbers. Do not assume pin-compatible alternatives without verifying electrical parameters and package dimensions against the original datasheet.

MQ2N4858MQ2N4858
$45.38
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