MQ2N5116UB

$62.82

Description：JFET P-CH 30V UB
Series：-

SKU:125f67a3d43e Category: JFETs Brand: Microchip Technology

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Product introduction

Product Detailed Parameters

Description：JFET P-CH 30V UB
Series：-
Mfr：Microchip Technology
Package：Bulk
FET Type：P-Channel
Voltage - Breakdown (V(BR)GSS)：30 V
Drain to Source Voltage (Vdss)：30 V
Current - Drain (Idss) @ Vds (Vgs=0)：5 mA @ 15 V
Current Drain (Id) - Max：-
Voltage - Cutoff (VGS off) @ Id：1 V @ 1 nA
Input Capacitance (Ciss) (Max) @ Vds：27pF @ 15V
Resistance - RDS(On)：175 Ohms
Power - Max：500 mW
Operating Temperature：-65°C ~ 200°C (TJ)
Mounting Type：Surface Mount
Package / Case：3-SMD, No Lead
Supplier Device Package：UB
Grade：Military
Qualification：MIL-PRF-19500

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MQ2N5116UB

Overview

The MQ2N5116UB is a Silicon P-Channel Junction Field Effect Transistor (JFET) manufactured by Microchip Technology. It features a surface-mount single configuration with a maximum drain-source breakdown voltage of 30 V and a gate-source breakdown voltage of 30 V. The device has a gate-source cutoff voltage of 4 V, an on-resistance of 175 ohms, and a power dissipation rating of 500 mW.

Feature Summary

Utilizes silicon technology for reliable semiconductor performance
Designed for surface-mount installation to facilitate automated assembly
Provides single-channel P-Channel operation for circuit control

Applications

Analog signal switching circuits
Voltage-controlled resistor applications
Low-noise amplifier input stages

Procurement Notes

Verify the specific suffix 'UB' against official Microchip documentation to confirm package type and tape-and-reel specifications. Ensure compatibility with surface-mount assembly processes. Confirm that the 30 V voltage ratings align with system requirements. Validate that the 175 ohm on-resistance meets circuit impedance needs before finalizing procurement.

Selection Notes

Select this component when a surface-mount P-Channel JFET is required. Compare the 175 ohm on-resistance and 4 V cutoff voltage against circuit design constraints. Ensure the 500 mW power dissipation capability is sufficient for the intended thermal environment. Verify that the 30 V breakdown voltages provide adequate margin for the operating conditions.

Part Context

This part belongs to the Microchip JFET product line, which includes various N-Channel and P-Channel devices. The MQ2N5116UB is a specific variant within this family, distinguished by its surface-mount packaging and P-Channel characteristics. It serves as a discrete semiconductor solution for analog signal processing tasks requiring low noise and high reliability.

Replacement Considerations

Consult official Microchip documentation for verified substitute part numbers. Cross-reference electrical parameters such as breakdown voltage, on-resistance, and cutoff voltage to ensure functional equivalence. Do not assume compatibility based solely on similar model names without verifying datasheet specifications.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

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Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

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Mode of Transportation

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Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.