ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：RF MOSFET LDMOS 50V NI650
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR)
- Technology：LDMOS
- Frequency：1.8MHz ~ 1.215GHz
- Gain：25.6dB
- Voltage - Test：50 V
- Current Rating (Amps)：2µA
- Noise Figure：-
- Current - Test：100 mA
- Power - Output：85W
- Voltage - Rated：133 V
- Grade：-
- Qualification：-
- Mounting Type：Chassis Mount
- Package / Case：NI-650H-4L
- Supplier Device Package：NI-650H-4L
- Configuration：Dual
Download product information
Overview
The MRF085HR3 is an RF Power LDMOS Transistor designed for high VSWR industrial, scientific, and medical applications. It operates from 1.8 to 1215 MHz with a maximum drain-source voltage of 133 Vdc and an operating voltage of 50 Vdc. At 520 MHz under CW conditions, it delivers 85 W output power with 25.6 dB gain and 73.3% drain efficiency. The device features unmatched input and output ports, integrated ESD protection, and supports single-ended or push-pull configurations.
Feature Summary
- Unmatched input and output design enabling wide frequency range utilization
- High ruggedness suitable for high VSWR environments
- Integrated ESD protection with extended negative gate-source voltage range
Applications
- Industrial, scientific, and medical (ISM) systems including laser generation and plasma etching
- Broadcast applications such as radio and VHF TV broadcast
- Aerospace and defense including VOR, HF/VHF communications, and weather radar
- Mobile radio equipment in VHF and UHF bands
Procurement Notes
Verify the specific ordering suffix R3 corresponds to the required tape and reel quantity of 250 units on a 44 mm width, 13-inch reel. Confirm package type NI-650H-4L matches your assembly requirements. Ensure compatibility with NXP's standard terms and conditions before finalizing procurement.
Selection Notes
Select this component for broadband applications requiring operation across 1.8 to 1215 MHz without matching networks. Consider its high thermal dissipation capability and ruggedness for harsh environments. Validate performance at your specific operating frequency and bias conditions, as typical values may vary.
Part Context
This part belongs to NXP's RF Power LDMOS Transistor family, specifically engineered for high-power, high-frequency applications. It utilizes enhancement-mode lateral MOSFET technology to provide robust performance in demanding RF amplifier designs.
Replacement Considerations
No public confirmed substitute part numbers are available in the documentation.
FAQ
What is the maximum drain-source voltage rating?
The maximum Drain-Source Voltage (VDSS) is rated at -0.5 to +133 Vdc.
Can the device be used in a balanced configuration?
Yes, the device can be used in either single-ended or push-pull configurations.
What is the junction temperature range?
The Operating Junction Temperature Range is -40 to +225 °C.
Related recommended products
