MRF085HR5

Overview

The MRF085HR5 is an RF Power LDMOS Transistor designed for high ruggedness in industrial, scientific, medical (ISM), aerospace, and mobile radio applications. It operates across a wide frequency range from 1.8 to 1215 MHz with a maximum drain-source voltage of 133 Vdc and an operating voltage of 50 Vdc. At 520 MHz, it delivers 85 W CW output power with a typical gain of 25.6 dB and efficiency of 73.3%. The device features integrated ESD protection and supports single-ended or push-pull configurations.

Feature Summary

• High ruggedness design capable of withstanding extreme load mismatches exceeding 65:1 VSWR at all phase angles without degradation.
• Wide frequency utilization enabled by unmatched input and output matching networks spanning 1.8 to 1215 MHz.
• Integrated electrostatic discharge (ESD) protection with an extended negative gate-source voltage range to improve Class C operation.

Applications

• Industrial, scientific, and medical (ISM) systems including laser generation, plasma etching, and particle accelerators.
• Broadcast applications such as VHF TV and radio broadcast transmitters.
• Aerospace and defense systems including VHF omnidirectional range (VOR), HF/VHF communications, and weather radar.
• Mobile radio infrastructure supporting VHF and UHF radio operations.

Procurement Notes

Verify the specific ordering suffix R5 confirms the tape and reel packaging containing 50 units on a 44 mm tape width and 13-inch reel. Confirm the package type is NI-650H-4L. Ensure compatibility with the required thermal management solutions given the junction-to-case thermal resistance specifications. Validate that the application environment respects the maximum case operating temperature limits defined in the datasheet.

Selection Notes

Select this component for designs requiring broadband performance from sub-GHz frequencies up to 1215 MHz. It is suitable for linear applications and can be configured in single-ended or push-pull topologies. Consider the high ruggedness rating when designing for environments prone to severe load mismatches. Verify that the system impedance matches the balanced configuration requirements for optimal power transfer and stability.

Part Context

This part belongs to NXP's RF Power LDMOS Transistor family, specifically engineered for high-power broadband amplification. The MRF085H series utilizes a lateral MOSFET technology optimized for high voltage and current handling. The HR5 variant denotes the specific reel packaging format within the broader MRF085 product line.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

FAQ

What is the maximum VSWR the MRF085HR5 can withstand?

The device can withstand a VSWR greater than 65:1 at all phase angles at 520 MHz with no device degradation under specified test conditions.

Can the MRF085HR5 be used in a push-pull configuration?

Yes, the device is characterized for use in both single-ended and push-pull configurations.

What is the operating voltage range for the MRF085HR5?

The device is characterized from 30 to 50 V for ease of use, with a maximum drain-source voltage rating of 133 Vdc.