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The MRF101AN is an N-channel enhancement-mode lateral MOSFET (LDMOS) transistor designed for RF power applications up to 250 MHz. It operates at a drain-source voltage of 50 Vdc and delivers continuous wave output power ranging from 104 W to 130 W across frequencies between 13.56 MHz and 87.5 MHz. The device features a TO-220-3 package with Pin 1 as Gate, Pin 2 as Source, and Pin 3 as Drain. It includes integrated ESD protection and is characterized for operation from 30 V to 50 V.
Verify the specific ordering suffix and package variant against the official datasheet before procurement. Confirm that the component meets RoHS compliance requirements if applicable to your manufacturing process. Ensure that the supply chain source provides valid traceability documentation. Check for any end-of-life notifications or recommended replacement parts if long-term availability is required for the project lifecycle.
Select the MRF101AN when designing broadband RF power amplifiers requiring high ruggedness and performance up to 250 MHz. Consider the mirror pinout configuration if utilizing a two-up push-pull topology to simplify layout. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance. Ensure the application voltage does not exceed the maximum rated drain-source voltage of 133 V.
This component belongs to the MRF101 series of wideband RF power LDMOS transistors manufactured by NXP Semiconductors. It is part of a product longevity program ensuring assured supply for a minimum of 15 years after launch. The series includes complementary pinout variants like the MRF101BN to support flexible circuit design options for industrial and broadcast applications.
Public confirmed substitute part numbers are not provided in the verified source material.