MRF10350

Overview

The MRF10350 is a microwave pulse power silicon NPN transistor designed for operation within the 1025–1150 MHz frequency range. It delivers a peak output power of 350 W and features guaranteed performance at 1090 MHz, with a minimum gain of 8.5 dB and typical gain of 9.0 dB. The device incorporates internal input and output matching networks and is characterized using the Mode-S pulse format. It is housed in a hermetically sealed CASE 355E-01 package.

Feature Summary

• Hermetically sealed package construction
• Internal input and output matching networks
• Gold metallized emitter ballasting for reliability
• Silicon nitride passivation layer

Applications

• TCAS transmitters
• TACAN transmitters
• Mode-S transmitters

Procurement Notes

Verify component authenticity by cross-referencing the manufacturer marking with official MACOM documentation. Confirm that the physical package matches the specified CASE 355E-01 style. Ensure the device is handled according to electrostatic discharge protocols during installation to maintain the integrity of the gold metallization and internal structures.

Selection Notes

Select this component specifically for high-power pulse amplifier applications operating between 1025 and 1150 MHz. The device requires a common base configuration. Designers must account for the specific Mode-S pulse format used during characterization when developing the driving circuitry and thermal management systems for the final assembly.

Part Context

This part belongs to the family of microwave pulse power silicon NPN transistors manufactured by MACOM Technology Solutions. It is engineered for robust performance in demanding radio frequency environments where high peak power output and reliable operation under mismatched load conditions are critical requirements.

Replacement Considerations

No public substitute part numbers are documented for this component.