MRF134

Overview

The MRF134 is an N-channel enhancement-mode RF power MOSFET designed for wideband large-signal amplifier and oscillator applications up to 400 MHz. It guarantees 5.0 watts output power and a minimum gain of 11 dB at 28 V and 150 MHz, with typical efficiency of 55%. At 400 MHz under the same conditions, it delivers 5.0 W output with 10.6 dB gain. The device features a low noise figure of 2.0 dB (typical) at 200 mA and 150 MHz.

Feature Summary

• N-channel enhancement mode construction
• Excellent thermal stability suitable for Class A operation
• Immunity from severe load mismatch without damage
• Gate voltage control for manual gain control and modulation

Applications

• Wideband large-signal amplifiers
• Oscillators
• VHF power amplifier applications

Procurement Notes

Verify the specific datasheet revision against current MACOM documentation before finalizing designs. Confirm that the component meets all required electrical parameters for your operating frequency and bias conditions. Ensure proper impedance matching networks are utilized to maintain stability and performance.

Selection Notes

Select this component for broadband VHF applications requiring high gain and robust load immunity. Consider its suitability for Class A linear operation where thermal stability is critical. Evaluate gate bias requirements for desired quiescent drain current and gain control capabilities.

Part Context

The MRF134 belongs to the MACOM RF MOSFET line, featuring a vertical planar structure. This design avoids processing difficulties associated with V-groove vertical power FETs. It is characterized by both small-signal scattering parameters and large-signal impedances to aid in network design.

Replacement Considerations

Consult MACOM application notes or official product listings for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' devices without explicit confirmation from the manufacturer.