MRF136

Overview

The MRF136 is an N-channel enhancement-mode RF MOSFET transistor designed for wideband large signal amplifier and oscillator applications. It operates up to 400 MHz in a single-ended configuration with a guaranteed 28V supply. At 150 MHz, it delivers 15 watts of output power, achieving a typical narrowband gain of 16 dB and efficiency of 60%. The device features excellent thermal stability suitable for Class A operation and facilitates manual gain control, ALC, and modulation techniques.

Feature Summary

• Enhancement-mode N-channel architecture providing high gain and simple bias systems
• Robust load mismatch immunity verified at all phase angles with 30:1 VSWR
• Excellent thermal stability ideally suited for Class A linear operation
• Gate voltage controllable from rated output down to zero for modulation

Applications

• Wideband large signal amplifiers
• Oscillator circuits
• Manual gain control systems
• Automatic Level Control (ALC) designs
• Linear amplification requiring low noise performance

Procurement Notes

Verify the specific datasheet revision (Rev. V2) against current procurement requirements. Confirm that the application environment strictly avoids medical or life-sustaining uses, as these are explicitly excluded by the manufacturer. Ensure proper impedance matching networks are utilized to maintain stability given the device's triode characteristics and potential for self-oscillation without appropriate loading or feedback circuitry.

Selection Notes

Select this component for VHF power amplifier applications requiring high gain and robustness against severe load mismatches. The device is optimized for linear amplification where gate voltage control allows precise adjustment of power output. Consider its relatively high input impedance which simplifies broadband network design compared to bipolar alternatives. Ensure adequate thermal management is provided to support Class A operation.

Part Context

The MRF136 belongs to MACOM’s RF MOSFET line, utilizing a vertical planar structure to avoid processing difficulties associated with V-groove devices. This silicon-based technology offers relative immunity from thermal runaway and draws no DC gate current, allowing for simple resistive divider biasing networks. It is part of a broader range of RF power transistors including LDMOS and DMOS options.

Replacement Considerations

The MRF137 is documented as a similar RF power N-channel enhancement-mode FET designed for VHF power amplifier applications within the same product family.