MRF137

Overview

The MRF137 is an N-channel enhancement-mode RF power MOSFET designed for wideband large-signal output and driver stages up to 400 MHz. It guarantees 30 W output power and a minimum gain of 13 dB at 28 V and 150 MHz, with typical efficiency of 60%. At 400 MHz under the same conditions, it delivers 7.7 dB gain. The device features low noise figure (1.5 dB typ. at 1.0 A, 150 MHz) and excellent thermal stability suitable for Class A operation.

Feature Summary

• N-channel enhancement-mode vertical planar structure
• Immunity from thermal runaway and severe load mismatch
• DC gate voltage control for manual gain, ALC, and modulation

Applications

• VHF power amplifier applications
• Wideband large-signal output stages
• Driver stages up to 400 MHz range

Procurement Notes

Verify the specific datasheet revision (e.g., Rev. V2) against the manufacturer's official documentation before finalizing design specifications. Confirm that the component meets all maximum ratings regarding drain voltage and current for the intended operating environment. Ensure proper impedance matching networks are utilized to maintain stability given the device's high gain characteristics.

Selection Notes

Select this component for designs requiring simple bias systems and relative immunity to thermal runaway. The high input impedance facilitates broadband network design compared to bipolar alternatives. Consider the need for stability techniques such as drain loading or resistive feedback due to the device being a non-unilateral triode capable of self-oscillation.

Part Context

The MRF137 belongs to the MACOM RF MOSFET Line, specifically engineered for VHF power amplifier applications. It utilizes a vertical structure with a planar design to avoid processing difficulties associated with V-groove vertical power FETs. This construction supports high gain, low noise, and the ability to withstand severely mismatched loads without damage.

Replacement Considerations

Public confirmed substitute part numbers: None identified.