MRF140

MRF140

$90.31
  • Description:RF MOSFET 28V 211-11
  • Series:-

SKU:fd6bc3584834 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET 28V 211-11
  • Series:-
  • Mfr:MACOM Technology Solutions
  • Package:Tray
  • Technology:MOSFET (Metal Oxide)
  • Frequency:30MHz ~ 150MHz
  • Gain:6dB ~ 15dB
  • Voltage - Test:28 V
  • Current Rating (Amps):16A
  • Noise Figure:-
  • Current - Test:250 mA
  • Power - Output:150W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:211-11, Style 2
  • Supplier Device Package:211-11, Style 2
  • Configuration:N-Channel

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MRF140

Overview

The MRF140 is an N-Channel enhancement mode RF MOSFET designed for linear large-signal output stages up to 150 MHz. It operates at a specified 28 volts and delivers 150 watts of output power with a typical power gain of 15 dB and efficiency of 40%. The device exhibits superior high-order intermodulation distortion (IMD) characteristics, specifically IMD(d3) of -30 dB and IMD(d11) of -60 dB at 150 W PEP. It undergoes 100% testing for load mismatch at all phase angles with a 30:1 VSWR.

Feature Summary

  • N-Channel enhancement mode construction optimized for linear applications
  • Superior high-order intermodulation distortion performance
  • Robust reliability verified through 100% load mismatch testing

Applications

  • Linear large-signal output stages
  • Amplifier designs operating within the 150 MHz frequency range

Procurement Notes

Verify the specific datasheet revision against the manufacturer's official documentation before finalizing procurement. Confirm that the intended application environment does not exceed the absolute maximum ratings defined in the electrical specifications table. Ensure proper gate termination practices are implemented to prevent floating conditions, as the device lacks internal monolithic Zener protection.

Selection Notes

Select this component when designing linear amplifiers requiring 150 watts of output power below 150 MHz. Consider the thermal management requirements associated with the specified power dissipation levels. Evaluate the circuit design to ensure the gate voltage never exceeds the rated limit to avoid permanent oxide layer damage. Account for the high input resistance and capacitive nature of the gate terminal during impedance matching.

Part Context

The MRF140 belongs to MACOM's RF MOSFET line, which includes devices ranging from low power to high power configurations. This series utilizes silicon technology and is engineered for robust performance in demanding RF environments. The product family supports various mounting styles and packaging options to facilitate integration into different amplifier architectures.

Replacement Considerations

Consult the official MACOM datasheet for confirmed substitute part numbers. Verify compatibility regarding pinout, package dimensions, and electrical parameters before substitution.

FAQ

Does the MRF140 include internal gate protection?

No, the device does not have an internal monolithic Zener diode from gate-to-source. External Zener diodes are recommended if gate protection is required.

What is the typical intermodulation distortion performance?

At 150 W PEP, the typical IMD(d3) is -30 dB and the typical IMD(d11) is -60 dB.

How is the device tested for reliability?

The MRF140 is 100% tested for load mismatch at all phase angles with a 30:1 VSWR.

MRF140MRF140
$90.31
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