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Product Detailed Parameters
- Description：RF MOSFET LDMOS 12.5V PLD-1.5
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：LDMOS
- Frequency：520MHz
- Gain：15dB
- Voltage - Test：12.5 V
- Current Rating (Amps)：2A
- Noise Figure：-
- Current - Test：50 mA
- Power - Output：3W
- Voltage - Rated：40 V
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：PLD-1.5
- Supplier Device Package：PLD-1.5
- Configuration：-
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Overview
The MRF1513NT1 is an N-Channel Enhancement-Mode Lateral MOSFET designed for broadband commercial and industrial applications up to 520 MHz. It delivers 3 Watts output power with 15 dB gain and 65% efficiency at 12.5 Volts. The device withstands 20:1 VSWR under overdrive conditions. Maximum ratings include a 40 Vdc drain-source voltage, ±20 Vdc gate-source voltage, and 2 A continuous drain current. Total device dissipation is 31.25 W at 25°C case temperature.
Feature Summary
- Excellent thermal stability
- Characterized with series equivalent large-signal impedance parameters
Applications
- Large-signal common source amplifier applications in 7.5 volt portable FM equipment
- Large-signal common source amplifier applications in 12.5 volt mobile FM equipment
- Broadband commercial applications
- Broadband industrial applications
Procurement Notes
Verify the component status as End of Life or obsolete before procurement planning. Confirm RoHS compliance and lead-free termination specifications via the manufacturer's official documentation. Ensure handling precautions are observed due to electrostatic discharge susceptibility inherent to MOS devices.
Selection Notes
Select this component for VHF and UHF portable power amplifier designs requiring high gain and simple bias systems. Verify thermal management capabilities to maintain junction temperatures within limits. Consider the PLD-1.5 surface mount package for automated pick-and-placement manufacturing processes.
Part Context
This part belongs to the RF Power Field Effect Transistor family from Freescale Semiconductor (now NXP). It is specifically engineered as a lateral N-channel broadband RF power MOSFET. The device utilizes a plastic PLD-1.5 package suitable for surface mount technology.
Replacement Considerations
MRF1518NT1
FAQ
What is the maximum operating frequency?
The device is designed for frequencies up to 520 MHz.
Does the device have internal gate protection?
No, the device does not have an internal monolithic zener diode from gate-to-source; external protection is recommended.
What is the suggested quiescent drain current?
The device was characterized at IDQ = 50 mA, which is the suggested value for typical applications.
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