MRF151A

MRF151A

$118.59
  • Description:RF MOSFET 50V P-244
  • Series:-

SKU:f7c3cfc32210 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET 50V P-244
  • Series:-
  • Mfr:MACOM Technology Solutions
  • Package:Tray
  • Technology:MOSFET (Metal Oxide)
  • Frequency:30MHz ~ 175MHz
  • Gain:13dB ~ 22dB
  • Voltage - Test:50 V
  • Current Rating (Amps):16A
  • Noise Figure:-
  • Current - Test:250 mA
  • Power - Output:150W
  • Voltage - Rated:125 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:P-244
  • Supplier Device Package:P-244
  • Configuration:N-Channel

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MRF151A

Overview

The MRF151A is an N-Channel RF Power MOSFET designed for broadband commercial and military applications up to 175 MHz. It delivers 150 W output power at 30 MHz with 18 dB gain (22 dB typical) and 40% efficiency, maintaining 150 W output at 175 MHz with 13 dB gain. The device features enhanced thermal performance, high power dissipation, low thermal resistance, and ruggedness tested at rated output power. Nitride passivation ensures reliability.

Feature Summary

  • Enhanced thermal performance and higher power dissipation capabilities
  • Nitride passivated die for enhanced reliability
  • Ruggedness tested at rated output power

Applications

  • Solid state transmitters for FM broadcast bands
  • Solid state transmitters for TV channel frequency bands
  • Broadband commercial applications
  • Broadband military applications

Procurement Notes

Verify the specific datasheet revision (e.g., Rev. V1) matches your design requirements. Confirm that the component meets all environmental and safety standards required for your intended deployment. Ensure proper handling procedures are followed due to the sensitivity of RF semiconductor devices.

Selection Notes

Select this component when designing amplifiers requiring high power output across a wide frequency range up to 175 MHz. Consider its thermal management needs given the high power dissipation characteristics. Evaluate its suitability for both commercial and military environments based on its ruggedness testing.

Part Context

This part belongs to MACOM's RF Power Field-Effect Transistor line, specifically the N-Channel Broadband MOSFET category. It is engineered for high-power, high-gain applications in the VHF/UHF spectrum, serving as a key active element in solid-state transmitter designs.

Replacement Considerations

Check for direct substitutes within the MRF151 series or other MACOM broadband RF MOSFETs offering similar power and frequency specifications. Verify pinout compatibility and thermal interface requirements before substitution.

FAQ

What is the maximum operating frequency for the MRF151A?

The MRF151A is designed for broadband applications at frequencies up to 175 MHz.

Does the MRF151A maintain its output power at higher frequencies?

Yes, it guarantees 150 W output power at 30 MHz and maintains 150 W output power at 175 MHz.

What type of passivation does the MRF151A use?

The device uses nitride passivation on the die to enhance reliability.

MRF151AMRF151A
$118.59
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