MRF1535NT1

Overview

The MRF1535NT1 is an N-Channel Enhancement-Mode Lateral MOSFET designed for broadband commercial and industrial applications up to 520 MHz. It delivers 35 Watts output power with 13.5 dB gain and 55% efficiency at 12.5 Volts. The device withstands 20:1 VSWR under overdrive conditions. Key electrical ratings include a drain-source voltage of 40 Vdc, continuous drain current of 6 Adc, and total device dissipation of 135 W at 25°C case temperature.

Feature Summary

• Broadband performance delivering full power across the 135-175 MHz, 400-470 MHz, and 450-520 MHz bands.
• High thermal stability characterized by series equivalent large-signal impedance parameters.
• Robust ruggedness capable of handling severe load mismatches without damage.

Applications

• Large-signal common source amplifier applications in 12.5 volt mobile FM equipment
• Broadband commercial RF power amplification
• Industrial RF signal generation

Procurement Notes

Verify component authenticity through authorized channels as this part originates from Freescale Semiconductor. Confirm RoHS compliance status and lead-free termination specifications (N suffix) prior to integration. Ensure proper ESD precautions are observed during handling due to MOS device sensitivity. Validate package dimensions against the TO-272-6 wrap plastic outline before PCB layout finalization.

Selection Notes

Select this component for designs requiring high gain and wide bandwidth operation in VHF and UHF ranges. The lateral MOSFET structure offers simple bias systems and immunity to thermal runaway compared to bipolar alternatives. Consider the 135 W dissipation rating and 0.90 °C/W thermal resistance when designing heat sinking solutions for sustained high-power operation.

Part Context

This device belongs to the MRF15xx series of RF power field effect transistors. It shares design characteristics with related models like the MRF1518NT1 but provides higher output power capabilities. The product line focuses on broadband applications where consistent performance across multiple frequency segments is required for mobile and industrial radio systems.

Replacement Considerations

MRF1535FNT1 serves as a functional equivalent within the same family.

FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is 200 °C.

Does the device have internal gate protection?

No, the device lacks an internal monolithic zener diode from gate-to-source; external protection is recommended.

How should the gate be terminated during operation?

The gate must not be left open-circuited or floating to prevent unintended turn-on from voltage buildup on the input capacitor.