MRF158

Overview

The MRF158 is an N-channel enhancement mode RF MOSFET from the Broadband RF TMOS line, designed for wideband large-signal amplifier and oscillator applications up to 500 MHz. It guarantees performance at 28 volts with a minimum output power of 2.0 watts and a minimum gain of 16 dB. The device typically achieves 55% efficiency and is ideally suited for Class A operation due to excellent thermal stability.

Feature Summary

• N-channel enhancement mode construction
• Excellent thermal stability suitable for Class A operation
• Facilitates manual gain control, automatic level control, and modulation techniques

Applications

• Wideband large-signal amplifiers
• Oscillator circuits
• Manual gain control systems
• Automatic Level Control (ALC) applications

Procurement Notes

Verify the specific datasheet revision and manufacturer documentation before integration. Confirm that the application environment does not involve medical, life-saving, or life-sustaining purposes, as these uses are explicitly excluded by the manufacturer. Ensure load mismatch testing requirements align with the specified VSWR capabilities.

Selection Notes

Select this component for designs requiring broadband performance up to 500 MHz with moderate power output. It is appropriate for Class A linear applications where thermal stability and ease of modulation are priorities. Consider the 28V operating requirement and ensure the circuit supports the necessary bias conditions for optimal gain and efficiency.

Part Context

This part belongs to MACOM's Broadband RF TMOS line, which utilizes silicon MOS technology for radio frequency applications. The series offers various power levels and frequencies, providing designers with options for different bandwidth and power requirements in communication systems.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.