SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The MRF160 is an N-channel enhancement mode RF MOSFET designed for wideband large-signal output and driver applications from 30 MHz to 500 MHz. It guarantees performance at 28 V and 500 MHz, delivering 4.0 W of output power with a minimum gain of 16 dB and typical efficiency of 55%. The device features excellent thermal stability suitable for Class A operation and facilitates manual gain control, automatic level control (ALC), and modulation techniques. It includes low Crss of 0.8 pF typical at VDS = 28 V.
Verify the specific datasheet revision (e.g., Rev. V1) when sourcing components, as MACOM reserves the right to make changes to product specifications without notice. Confirm that the intended application does not involve medical, life-saving, or life-sustaining systems, as these devices are explicitly excluded from such use cases by the manufacturer.
Select this component for broadband designs requiring stable performance up to 500 MHz. The guaranteed 16 dB minimum gain and 4.0 W output power make it suitable for driver and output stages. Ensure the design accommodates Class A biasing to leverage the device's excellent thermal stability and modulation capabilities.
The MRF160 belongs to the MACOM RF MOSFET line of broadband power FETs. These devices are silicon-based N-channel enhancement mode transistors optimized for high-performance radio frequency applications. The series provides reliable solutions for communication and radar systems requiring wideband signal processing.
No public confirmed substitute part numbers are available in the provided documentation.
Yes, the device is 100% tested for load mismatch at all phase angles with a 30:1 VSWR.
The typical efficiency is 55% at 28 V and 500 MHz.
Yes, the device facilitates modulation techniques in addition to manual gain control and ALC.