MRF160

MRF160

$47.09
  • Description:RF MOSFET 28V 249-06
  • Series:-

SKU:f4f52f02a201 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET 28V 249-06
  • Series:-
  • Mfr:MACOM Technology Solutions
  • Package:Tray
  • Technology:MOSFET (Metal Oxide)
  • Frequency:30MHz ~ 500MHz
  • Gain:18dB
  • Voltage - Test:28 V
  • Current Rating (Amps):1A
  • Noise Figure:-
  • Current - Test:50 mA
  • Power - Output:4W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:249-06
  • Supplier Device Package:249-06, Style 3
  • Configuration:N-Channel

Download product information

MRF160

Overview

The MRF160 is an N-channel enhancement mode RF MOSFET designed for wideband large-signal output and driver applications from 30 MHz to 500 MHz. It guarantees performance at 28 V and 500 MHz, delivering 4.0 W of output power with a minimum gain of 16 dB and typical efficiency of 55%. The device features excellent thermal stability suitable for Class A operation and facilitates manual gain control, automatic level control (ALC), and modulation techniques. It includes low Crss of 0.8 pF typical at VDS = 28 V.

Feature Summary

  • Designed primarily for wideband large-signal output and driver applications
  • Excellent thermal stability ideally suited for Class A operation
  • Facilitates manual gain control, ALC, and modulation techniques
  • Guaranteed load mismatch testing at all phase angles with 30:1 VSWR

Applications

  • Wideband large-signal output stages
  • Wideband driver stages
  • Class A amplifier circuits

Procurement Notes

Verify the specific datasheet revision (e.g., Rev. V1) when sourcing components, as MACOM reserves the right to make changes to product specifications without notice. Confirm that the intended application does not involve medical, life-saving, or life-sustaining systems, as these devices are explicitly excluded from such use cases by the manufacturer.

Selection Notes

Select this component for broadband designs requiring stable performance up to 500 MHz. The guaranteed 16 dB minimum gain and 4.0 W output power make it suitable for driver and output stages. Ensure the design accommodates Class A biasing to leverage the device's excellent thermal stability and modulation capabilities.

Part Context

The MRF160 belongs to the MACOM RF MOSFET line of broadband power FETs. These devices are silicon-based N-channel enhancement mode transistors optimized for high-performance radio frequency applications. The series provides reliable solutions for communication and radar systems requiring wideband signal processing.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

FAQ

Is the MRF160 tested for load mismatch?

Yes, the device is 100% tested for load mismatch at all phase angles with a 30:1 VSWR.

What is the typical efficiency of the MRF160?

The typical efficiency is 55% at 28 V and 500 MHz.

Can the MRF160 be used for modulation?

Yes, the device facilitates modulation techniques in addition to manual gain control and ALC.

MRF160MRF160
$47.09
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