MRF166C

Overview

The MRF166C is an N-channel enhancement mode RF MOSFET designed for wideband large-signal output and driver applications from 30 MHz to 500 MHz. It operates at a drain voltage of 28 Vdc, delivering 20 W of output power with 13.5 dB gain and 50% efficiency at 500 MHz. The device features excellent thermal stability suitable for Class A operation and low reverse transfer capacitance (Crss) of 4.0 pF at VDS = 28 V.

Feature Summary

• Guaranteed performance at 500 MHz under 28 Vdc conditions
• Facilitates manual gain control, automatic level control, and modulation techniques
• Excellent thermal stability ideally suited for Class A operation
• 100% tested for load mismatch at all phase angles with 30:1 VSWR

Applications

• Wideband large-signal output stages
• Wideband driver amplifiers
• Class A linear amplifier designs

Procurement Notes

Verify the specific datasheet revision against the manufacturer's official documentation before finalizing design specifications. Confirm that the application environment strictly adheres to the specified operating temperature ranges and voltage limits. Ensure proper thermal management solutions are implemented to maintain reliability during continuous operation.

Selection Notes

Select this component for designs requiring reliable performance in the 30 MHz to 500 MHz frequency range. It serves as a direct replacement for industry standards such as MRF136, V2820, BLF244, SD1902, and ST1001. Consider its suitability for applications necessitating manual gain control or modulation capabilities.

Part Context

The MRF166C belongs to MACOM's RF MOSFET line, specifically engineered for high-power radio frequency applications. It utilizes silicon technology housed in a CASE 319-07 package. This series focuses on providing robust performance for broadband communication systems requiring significant output power.

Replacement Considerations

This part is documented as a replacement for MRF136, V2820, BLF244, SD1902, and ST1001.