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Product Detailed Parameters
- Description：RF MOSFET 28V 333-04
- Series：-
- Mfr：MACOM Technology Solutions
- Package：Tray
- Technology：MOSFET (Metal Oxide)
- Frequency：400MHz
- Gain：10dB
- Voltage - Test：28 V
- Current Rating (Amps)：13A
- Noise Figure：-
- Current - Test：100 mA
- Power - Output：100W
- Voltage - Rated：65 V
- Grade：-
- Qualification：-
- Mounting Type：-
- Package / Case：333-04
- Supplier Device Package：333-04, Style 2
- Configuration：N-Channel
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Overview
The MRF175LU is an N-channel enhancement mode RF MOSFET designed for broadband commercial and military applications using single-ended circuits at frequencies to 400 MHz. It delivers 100 W output power with a typical power gain of 10 dB and efficiency of 55% when operated at 28 V. The device features low thermal resistance, 100% ruggedness testing at rated output power, and a reverse transfer capacitance (Crss) of 20 pF typ at VDS = 28 V.
Feature Summary
- Designed for broadband commercial and military applications using single-ended circuits at frequencies up to 400 MHz
- Features high power, high gain, and broadband performance suitable for solid state transmitters in FM broadcast or TV channel frequency bands
- Includes 100% ruggedness testing at rated output power and low thermal resistance
- Offers gate voltage control to vary power output from rated value down to zero, facilitating manual gain control, AGC/ALC, and modulation systems
Applications
- Solid state transmitters for FM broadcast
- Solid state transmitters for TV channel frequency bands
- HF, VHF and UHF power amplifier applications
Procurement Notes
Verify the specific suffix 'U' against the official datasheet to confirm the exact electrical characteristics and package style. Ensure that the procurement documentation explicitly references MACOM Technology Solutions Inc. as the manufacturer. Confirm compliance with RoHS details if required by your supply chain standards before finalizing orders.
Selection Notes
Select this component for designs requiring high gain and low noise in HF, VHF, and UHF ranges. Consider its relative immunity to thermal runaway and ability to withstand severely mismatched loads without damage. Verify that the simple bias system requirements align with your design constraints, noting that it requires forward bias for optimum performance.
Part Context
The MRF175LU belongs to the RF MOSFET Line from MACOM, featuring a vertical structure with a planar design. It is an N-channel enhancement mode field-effect transistor intended for power amplifier applications. The device is characterized at a quiescent drain current of 100 mA per side, which serves as the suggested minimum value for many applications.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided source material.
FAQ
How is the power output of the MRF175LU controlled?
Power output can be varied from its rated value down to zero (negative gain) by varying the DC gate voltage.
What are the handling precautions for the MRF175LU?
Devices should be transported in antistatic bags or conductive foam. Handling should avoid touching leads, and soldering must be done with grounded equipment to prevent damage.
Does the MRF175LU have internal gate protection?
No, these devices do not have an internal monolithic Zener diode from gate-to-source. An external Zener diode is recommended if gate protection is required.
