MRF176GU

Overview

The MRF176GU is an N-channel enhancement mode RF MOSFET designed for broadband commercial and military applications using push-pull circuits at frequencies to 500 MHz. At 50 V and 400 MHz, it delivers 150 W output power with 14 dB typical power gain and 50% efficiency. The device features low thermal resistance and a reverse transfer capacitance (Crss) of 7.0 pF typical at VDS = 50 V. It is ruggedly tested at rated output power.

Feature Summary

• N-channel enhancement mode construction
• Broadband performance up to 500 MHz
• Low thermal resistance design
• High input impedance gate structure

Applications

• Solid state transmitters for FM broadcast
• TV channel frequency band amplifiers
• Commercial push-pull amplifier circuits
• Military push-pull amplifier circuits

Procurement Notes

Verify the specific suffix against the datasheet to confirm electrical characteristics. The 'U' suffix indicates operation at 500 MHz with 150 W output power. Confirm package style matches CASE 375-04. Ensure handling procedures follow ESD precautions due to the sensitive gate oxide layer.

Selection Notes

Select this component for high-power HF, VHF, and UHF applications requiring simple bias systems and relative immunity from thermal runaway. Consider the 100 mA quiescent drain current as the suggested minimum value for characterization. Verify that the application does not exceed the maximum gate-to-source voltage rating of 40 V.

Part Context

This device belongs to MACOM's RF MOSFET line, which includes devices ranging from 2W to 600W. It complements other silicon-based RF power transistors like the MRF175GU and DU2880T series, offering a vertical planar structure suitable for linear and switching operations in demanding RF environments.

Replacement Considerations

MRF176GV: Offers 200 W output power at 225 MHz with 17 dB gain.

FAQ

Does the MRF176GU have an internal monolithic Zener diode?

No, the device does not have an internal monolithic Zener diode from gate-to-source. External protection is recommended if required.

What is the suggested minimum quiescent drain current?

The device was characterized at IDQ = 100 mA per side, which is the suggested minimum value.

How should the gate be handled during installation?

Avoid leaving the gate open-circuited or floating. Use grounding straps and keep devices in antistatic bags until installation.