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The MRF177 is an N-channel enhancement mode RF MOSFET designed for broadband commercial and military applications up to 400 MHz. It operates at a typical drain-source voltage of 28 V, delivering 100 W output power with 12 dB gain and 60% efficiency at 400 MHz. The device features low thermal resistance and a reverse transfer capacitance (Crss) of 10 pF typ. Packaged in CASE 744A-01, STYLE 2, it is ruggedness tested at rated output power.
Verify the specific revision status against the latest MACOM datasheet before procurement. Confirm that the CASE 744A-01 package style matches the design requirements. Ensure the application environment supports the specified 28 V operating voltage and thermal management needs for Class A operation.
Select this component for broadband applications requiring high output power up to 400 MHz. It is suitable for push-pull driver or output stages where thermal stability and reliability are critical. Consider its suitability for manual gain control, ALC, and modulation circuits based on the 12 dB gain specification.
The MRF177 belongs to the MACOM RF MOSFET line, targeting broadband commercial and military sectors. It serves as a robust solution for high-power RF amplification within the 400 MHz frequency range, offering a balance of performance and thermal resilience for demanding environments.
No public confirmed substitute part numbers are available in the provided documentation.
At 400 MHz and 28 V, the MRF177 typically delivers 100 W output power, 12 dB gain, and 60% efficiency.
Yes, the device exhibits excellent thermal stability, making it suited for Class A operation.
The MRF177 uses the CASE 744A-01, STYLE 2 package.