MRF18060ALR3

Overview

The MRF18060ALR3 is a lateral N-channel RF power MOSFET designed for PCN and PCS base station applications operating between 1800 MHz and 2000 MHz. It delivers 60 W of CW output power at 26 Vdc with 45% drain efficiency and 13 dB power gain across the GSM 1805–1880 MHz band. The device features internal input and output matching, integrated ESD protection, and excellent thermal stability. Maximum ratings include a 65 V drain-source voltage, 180 W total device dissipation, and an operating junction temperature up to 200°C.

Feature Summary

• Internally matched for ease of use
• High gain, high efficiency and high linearity
• Integrated ESD protection
• Designed for maximum gain and insertion phase flatness

Applications

• PCN and PCS base station applications
• FM, TDMA, CDMA and multicarrier amplifier applications
• Class AB cellular radio and WLL applications

Procurement Notes

Verify component authenticity through authorized distributors or official manufacturer channels. Confirm datasheet revision status as this part may be archived. Ensure proper handling procedures are followed due to ESD sensitivity. Validate that the specific ordering suffix matches the required lead plating thickness and packaging format before finalizing procurement orders.

Selection Notes

Select this component for linear RF amplification in cellular infrastructure requiring high power density. Consider the internal matching network to simplify PCB layout. Evaluate thermal management requirements given the 180 W dissipation rating. Verify compatibility with Class AB biasing schemes for optimal linearity and efficiency trade-offs in wideband communication systems.

Part Context

This lateral N-channel MOSFET belongs to the MRF18060A family of RF power devices. It shares functional similarities with other base station transistors but is specifically optimized for the 1800–2000 MHz frequency range. The device utilizes a ceramic package design to support high-power RF operations while maintaining reliable performance under demanding thermal conditions typical of telecommunications equipment.

Replacement Considerations

MRF18060ALSR3

FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is 200°C.

Does the device require external matching networks?

No, the device is internally matched on both input and output for ease of use.

What is the specified VSWR capability?

The device is capable of handling a 10:1 VSWR at 26 Vdc, 1840 MHz, and 60 Watts CW output power.