MRF18085ALSR3

MRF18085ALSR3

$74.72
  • Description:RF MOSFET LDMOS 26V NI780
  • Series:-

SKU:05ab28948f0b Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:RF MOSFET LDMOS 26V NI780
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:1.81GHz ~ 1.88GHz
  • Gain:15dB
  • Voltage - Test:26 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:800 mA
  • Power - Output:85W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:NI-780S
  • Supplier Device Package:NI-780S
  • Configuration:-

Download product information

MRF18085ALSR3

Overview

The MRF18085ALSR3 is an N-channel enhancement-mode lateral MOSFET designed for GSM and GSM EDGE base station applications within the 1805–1880 MHz frequency band. It operates at a drain-source voltage of 26 Vdc, delivering 85 Watts CW output power with typical gain of 15 dB and efficiency of 52%. The device features internal matching, integrated ESD protection, and high thermal stability. It is housed in a CASE 465A-06 package (NI-780S) and supplied in tape and reel format.

Feature Summary

  • Internally matched input and output networks for simplified circuit design
  • Integrated electrostatic discharge (ESD) protection
  • High linearity and insertion phase flatness optimized for multicarrier amplifiers
  • Excellent thermal stability characterized by low junction-to-case thermal resistance

Applications

  • GSM and GSM EDGE base station power amplification
  • TDMA and CDMA amplifier applications
  • Class AB PCS/cellular radio transmitters
  • Wireless Local Loop (WLL) systems

Procurement Notes

Verify the specific ordering suffix 'SR3' to confirm the component is supplied in tape and reel packaging containing 250 units per 56 mm reel. Ensure the lead frame plating specification matches the 'L' suffix requirement for nominal 40μm gold thickness. Confirm compliance with RoHS standards during procurement validation.

Selection Notes

Select this component for designs requiring high gain and efficiency in the 1805–1880 MHz range. The internal matching simplifies impedance network design. Verify that the application supports the specified 26 Vdc operating voltage and 800 mA quiescent current. Ensure the PCB layout accommodates the CASE 465A-06 package dimensions and thermal requirements.

Part Context

This part belongs to the Freescale Semiconductor RF Power Field Effect Transistors family, specifically lateral N-channel enhancement-mode MOSFETs. It is archived under document number MRF18085A Rev. 6. The 'SR3' suffix denotes the specific packaging configuration, distinguishing it from the standard 'LR3' variant which uses a different case style.

Replacement Considerations

The MRF18085ALR3 is a related variant within the same datasheet but utilizes the CASE 465-06 package instead of the CASE 465A-06 package used by the MRF18085ALSR3. Verify mechanical fit and pinout compatibility before substitution.

FAQ

What is the maximum drain-source voltage rating?

The maximum drain-source voltage (VDSS) rating is -0.5 to +65 Vdc.

Does the MRF18085ALSR3 require external matching networks?

No, the device is internally matched on both input and output for ease of use.

What is the typical power gain at 85 Watts CW?

The typical power gain is 15 dB at 85 Watts CW output power.

MRF18085ALSR3MRF18085ALSR3
$74.72
Buy Now